SEMICONDUCTOR INTEGRATED CIRCUITS

An integrated power divider implemented in GaAs technology

Zebao Du, Hao Yang, Haiying Zhang and Min Zhu

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 Corresponding author: Du Zebao, Email:duzebao@ime.ac.cn

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Abstract: A compact lumped integrated power divider with low insertion loss using 0.5 μm GaAs pHEMT technology is presented. The proposed power divider uses the π-type LC network for transmission line equivalence and a thin film resistor for isolation tuning simultaneously. The quality factor of the inductor is analyzed and synthesized for insertion-loss influence. The measured insertion loss is less than 0.5 dB when the operating frequency is within the range of 5.15-6.15 GHz. The return loss and isolation are better than 15 dB and 20 dB, respectively. The compact dimension of the power divider is as small as 0.9×0.85 mm2. The measured results agree well with the simulated ones.

Key words: power dividerGaAsIPD



[1]
Grebennikov A. RF and microwave transmitter design. New York: Wiley, 2011 http://ci.nii.ac.jp/ncid/BB06505372
[2]
Pozar D M. Microwave engineering. 3rd ed. New York: Wiley, 2005 https://www.researchgate.net/publication/308449120_Microwave_Engineering
[3]
Kawai T, Ohta I, Enokihara A. Design method of lumped-element dual-band Wilkinson power dividers based on frequency transformation. Asia-Pacific Microwave Conference Proceedings, 2010:710 http://ieeexplore.ieee.org/document/5728440/
[4]
Lu L H, Liao Y T, Wu C R. A miniaturized Wilkinson power divider with CMOS active inductors. IEEE Microw Wireless Compon Lett, 2005, 15(11):775 doi: 10.1109/LMWC.2005.859020
[5]
Kim H T, Liu K, Frye R C, et al. Design of compact power divider using integrated passive device (IPD) technology. Electronic Components and Technology Conference, 2009:1894 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5074278
[6]
Elsbury M M, Dresselhaus P D, Bergren N F, et al. Broadband lumped-element integrated n-way power dividers for voltage standards. IEEE Trans Microw Theory Tech, 2009, 57(8):2055 doi: 10.1109/TMTT.2009.2025464
[7]
Wang C, Qian C, Kyung G I, et al. High performance integrated passive technology by SI-GaAs-based fabrication for RF and microwave application. Asia-Pacific Microwave Conference Proceedings, 2008:1 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4958020
[8]
Wang C, Lee W S, Zhang F, et al. A novel method for the fabrication of integrated passive devices on SI-GaAs substrate. International Journal of Advanced Manufacturing Technology, 2011, 52:1011 doi: 10.1007/s00170-010-2807-z
[9]
Lin Y S, Lee J H. Miniature ultra-wideband power divider using bridged T-coils. IEEE Microw Compon Lett, 2012, 22(8):391 doi: 10.1109/LMWC.2012.2205231
[10]
Wu Rui, Liao Xiaoping, Zhang Zhiqiang. MMIC-based RF on-chip LC passive filters. Journal of Semiconductors, 2008, 29(12):2437 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=08041402&flag=1
Fig. 1.  Wilkinson power divider.

Fig. 2.  Transmission line and its $LC$ network counterpart.

Fig. 3.  Lumped Wilkinson power divider.

Fig. 4.  Dual-$\pi $-type LC network.

Fig. 5.  Insertion loss with different quality factors.

Fig. 6.  Testing PCB of power divider.

Fig. 7.  Chip photo of power divider.

Fig. 8.  Measured (dashed line) and simulated (solid line) results. (a) $S_{11}$. (b) Insertion loss. (c) Isolation.

Table 1.   Characteristics of different technologies.

Table 2.   Comparison with previously reported high-performance power divider.

[1]
Grebennikov A. RF and microwave transmitter design. New York: Wiley, 2011 http://ci.nii.ac.jp/ncid/BB06505372
[2]
Pozar D M. Microwave engineering. 3rd ed. New York: Wiley, 2005 https://www.researchgate.net/publication/308449120_Microwave_Engineering
[3]
Kawai T, Ohta I, Enokihara A. Design method of lumped-element dual-band Wilkinson power dividers based on frequency transformation. Asia-Pacific Microwave Conference Proceedings, 2010:710 http://ieeexplore.ieee.org/document/5728440/
[4]
Lu L H, Liao Y T, Wu C R. A miniaturized Wilkinson power divider with CMOS active inductors. IEEE Microw Wireless Compon Lett, 2005, 15(11):775 doi: 10.1109/LMWC.2005.859020
[5]
Kim H T, Liu K, Frye R C, et al. Design of compact power divider using integrated passive device (IPD) technology. Electronic Components and Technology Conference, 2009:1894 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5074278
[6]
Elsbury M M, Dresselhaus P D, Bergren N F, et al. Broadband lumped-element integrated n-way power dividers for voltage standards. IEEE Trans Microw Theory Tech, 2009, 57(8):2055 doi: 10.1109/TMTT.2009.2025464
[7]
Wang C, Qian C, Kyung G I, et al. High performance integrated passive technology by SI-GaAs-based fabrication for RF and microwave application. Asia-Pacific Microwave Conference Proceedings, 2008:1 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4958020
[8]
Wang C, Lee W S, Zhang F, et al. A novel method for the fabrication of integrated passive devices on SI-GaAs substrate. International Journal of Advanced Manufacturing Technology, 2011, 52:1011 doi: 10.1007/s00170-010-2807-z
[9]
Lin Y S, Lee J H. Miniature ultra-wideband power divider using bridged T-coils. IEEE Microw Compon Lett, 2012, 22(8):391 doi: 10.1109/LMWC.2012.2205231
[10]
Wu Rui, Liao Xiaoping, Zhang Zhiqiang. MMIC-based RF on-chip LC passive filters. Journal of Semiconductors, 2008, 29(12):2437 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=08041402&flag=1
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    Received: 17 June 2013 Revised: 24 November 2013 Online: Published: 01 April 2014

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      Zebao Du, Hao Yang, Haiying Zhang, Min Zhu. An integrated power divider implemented in GaAs technology[J]. Journal of Semiconductors, 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003 Z B Du, H Yang, H Y Zhang, M Zhu. An integrated power divider implemented in GaAs technology[J]. J. Semicond., 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003.Export: BibTex EndNote
      Citation:
      Zebao Du, Hao Yang, Haiying Zhang, Min Zhu. An integrated power divider implemented in GaAs technology[J]. Journal of Semiconductors, 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003

      Z B Du, H Yang, H Y Zhang, M Zhu. An integrated power divider implemented in GaAs technology[J]. J. Semicond., 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003.
      Export: BibTex EndNote

      An integrated power divider implemented in GaAs technology

      doi: 10.1088/1674-4926/35/4/045003
      Funds:

      Project supported by the National Science and Technology Major Projects of China (Nos. 2011ZX03004-001-02, 2010ZX03007-002-03)

      the National Science and Technology Major Projects of China 2010ZX03007-002-03

      the National Science and Technology Major Projects of China 2011ZX03004-001-02

      More Information
      • Corresponding author: Du Zebao, Email:duzebao@ime.ac.cn
      • Received Date: 2013-06-17
      • Revised Date: 2013-11-24
      • Published Date: 2014-04-01

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