Fig. 1.
P$^+$ implanted PiN diode with floating field ring termination structure.
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| Citation: |
Sizhe Chen, Kuang Sheng, Jue Wang. 1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination[J]. Journal of Semiconductors, 2014, 35(5): 054003. doi: 10.1088/1674-4926/35/5/054003
S Z Chen, K Sheng, J Wang. 1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination[J]. J. Semicond., 2014, 35(5): 054003. doi: 10.1088/1674-4926/35/5/054003.
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1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination
doi: 10.1088/1674-4926/35/5/054003
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Abstract
This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication was based on a 12 μm thick drift layer with an N-type doping concentration of 8×1015 cm-3. P+ regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.-
Keywords:
- silicon carbide,
- PiN diode,
- field guarding rings,
- edge termination
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References
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