Fig. 1.
Structure of 3G wireless transceiver front-end, the presented ASM is located inside the dotted line. The chip inside of the line 2 is fabricated in SOI CMOS and line 1 is implemented in IPD.
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| Citation: |
Jie Cui, Lei Chen, Peng Zhao, Xu Niu, Yi Liu. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications[J]. Journal of Semiconductors, 2014, 35(6): 065005. doi: 10.1088/1674-4926/35/6/065005
J Cui, L Chen, P Zhao, X Niu, Y Liu. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications[J]. J. Semicond., 2014, 35(6): 065005. doi: 10.1088/1674-4926/35/6/065005.
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A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications
doi: 10.1088/1674-4926/35/6/065005
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Abstract
A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. -
References
[1] Wolf R, Joseph A, Botula A, et al. A thin-film SOI 180 nm CMOS RF switch. IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF systems, 2009 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4770520[2] Blaschke V, Zwingman R, Hurwitz P, et, al. A linear-throw SP6T antenna switch in 180 nm CMOS thick-film SOI. IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, 2011 http://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?reload=true&arnumber=6105898&punumber%3D6094290[3] Tinella C, Fournier J M, Belot D, et al. A high-performance CMOS-SOI antenna switch for the 2.5-5 GHz band. IEEE J Solid-State Circuits, 2003, 38:1279 doi: 10.1109/JSSC.2003.813289[4] Ranta T, Ellä J, Pohjonen H. Antenna switch linearity requirem ents for GSM/WCDMA mobile phone front-ends. The European Conference on Wireless Technology, 2005 doi: 10.1109/ECWT.2005.1617645[5] Tombak A, Carroll M S, Kerr D C, et al. Design of high-order switches for multimode applications on a silicon-on-insulator technology. IEEE Trans Microw Theory Tech, 2013, 61(10):3639 doi: 10.1109/TMTT.2013.2277989[6] Williams W, Cho T, Mustafa O, et al. A compact BiFET front-end module for 802.11a/b/g/n TX/RX and 802.16e RX using a triplexer filter. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011:223 http://ieeexplore.ieee.org/iel5/6069664/6082731/06082787.pdf?arnumber=6082787[7] Dai Y S, Xiao S L, Chen S B, et al. Design on antenna switch module for dual band phone (GSM/UMTS) using LTCC technology. International Symposium on Signals Systems and Electronics (ISSSE), 2010 http://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?reload=true&arnumber=5607096&punumber%3D5598558 -
Proportional views
