Fig. 1.
Schematic device cross-sectional view of a 10000 V 4H-SiC JBS diode.
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Runhua Huang, Yonghong Tao, Pengfei Cao, Ling Wang, Gang Chen, Song Bai, Rui Li, Yun Li, Zhifei Zhao. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. Journal of Semiconductors, 2014, 35(7): 074005. doi: 10.1088/1674-4926/35/7/074005
R H Huang, Y H Tao, P F Cao, L Wang, G Chen, S Bai, R Li, Y Li, Z F Zhao. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. J. Semicond., 2014, 35(7): 074005. doi: 10.1088/1674-4926/35/7/074005.
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Development of 10 kV 4H-SiC JBS diode with FGR termination
doi: 10.1088/1674-4926/35/7/074005
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Abstract
The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6×1014 cm-3. The on-state voltage was 2.7 V at JF=13 A/cm2.-
Keywords:
- 4H-SiC,
- JBS diodes,
- edge termination,
- floating guard rings
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References
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