SEMICONDUCTOR DEVICES

Electric field optimized LDMOST using multiple decrescent and reverse charge regions

Jianbing Cheng1, 2, , Xiaojuan Xia1, Tong Jian1, Yufeng Guo1, Shujuan Yu1 and Hao Yang1

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 Corresponding author: Cheng Jianbing, Email:chengjianb@163.com

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Abstract: A lateral double-diffused metal-oxide-semiconductor field effect transistor (LDMOST) with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribution is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions' lengths.

Key words: LDMOSTmultiple decrescent and reverse charge regionselectric fieldbreakdown voltageon-resistance



[1]
Shi L X, Jia K, Sun W F. A novel compact high-voltage LDMOS transistor model for circuit simulation. IEEE Trans Electron Devices, 2013, 60(1): 346 doi: 10.1109/TED.2012.2227116
[2]
Takaya H, Miyagi K, Hamada K. Advanced floating island and thick bottom oxide trench gate MOSFET (FITMOS) with reduced RonA during AC operation by passive hole and improved BVdssRonA trade-off by elliptical floating island. 19th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2007: 197
[3]
Apples J, Vaes H. A high voltage thin layer devices (RESURF devices). IEDM Tech Dig, 1979: 238 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1480454
[4]
Hardikar S, Tadikonda R, Green D W, et al. Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping. IEEE Trans Electron Devices, 2004, 51(12): 2223 doi: 10.1109/TED.2004.839104
[5]
He J, Huang R, Zhang X, et al. Analytical model of three-dimensional effect on voltage and edge peak filed distributions and optimal space for planar junction with a single field limiting ring. Solid-State Electron, 2001, 45(1): 79 doi: 10.1016/S0038-1101(00)00226-4
[6]
Cheng J B, Zhang B, Li Z J. A novel 1200-V LDMOSFET with floating buried layer in substrate. IEEE Electron Device Lett, 2008, 29(6): 645 doi: 10.1109/LED.2008.922731
[7]
Cheng J B, Zhang B, Duan B X, et al. A novel super-junction LDMOS with N-type step doping buffer layer. Chin Phys Lett, 2008, 25(1): 262 doi: 10.1088/0256-307X/25/1/071
Fig. 1.  Cross-section of the MNR-LDMOST (n = 3).

Fig. 2.  2-D electric field distributions of (a) the conventional LDMOST and (b) the MNR-LDMOST.

Fig. 3.  Relationship between Vbd and n.

Fig. 4.  Relationship between Ron and n.

Fig. 5.  Dependence of the Vbd and the n-region doping concentration ($N_{\rm nr})$.

Fig. 6.  Vbd versus the variation of the n-region length ($\Delta L_{\rm nr})$.

Fig. 7.  Vbd versus the variation of the p-type epitaxial layer thickness ($\Delta T_{\rm p})$.

Fig. 8.  Sensitivity of the key parameters on the breakdown voltage.

[1]
Shi L X, Jia K, Sun W F. A novel compact high-voltage LDMOS transistor model for circuit simulation. IEEE Trans Electron Devices, 2013, 60(1): 346 doi: 10.1109/TED.2012.2227116
[2]
Takaya H, Miyagi K, Hamada K. Advanced floating island and thick bottom oxide trench gate MOSFET (FITMOS) with reduced RonA during AC operation by passive hole and improved BVdssRonA trade-off by elliptical floating island. 19th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2007: 197
[3]
Apples J, Vaes H. A high voltage thin layer devices (RESURF devices). IEDM Tech Dig, 1979: 238 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1480454
[4]
Hardikar S, Tadikonda R, Green D W, et al. Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping. IEEE Trans Electron Devices, 2004, 51(12): 2223 doi: 10.1109/TED.2004.839104
[5]
He J, Huang R, Zhang X, et al. Analytical model of three-dimensional effect on voltage and edge peak filed distributions and optimal space for planar junction with a single field limiting ring. Solid-State Electron, 2001, 45(1): 79 doi: 10.1016/S0038-1101(00)00226-4
[6]
Cheng J B, Zhang B, Li Z J. A novel 1200-V LDMOSFET with floating buried layer in substrate. IEEE Electron Device Lett, 2008, 29(6): 645 doi: 10.1109/LED.2008.922731
[7]
Cheng J B, Zhang B, Duan B X, et al. A novel super-junction LDMOS with N-type step doping buffer layer. Chin Phys Lett, 2008, 25(1): 262 doi: 10.1088/0256-307X/25/1/071
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    Received: 25 December 2013 Revised: 05 February 2014 Online: Published: 01 July 2014

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      Jianbing Cheng, Xiaojuan Xia, Tong Jian, Yufeng Guo, Shujuan Yu, Hao Yang. Electric field optimized LDMOST using multiple decrescent and reverse charge regions[J]. Journal of Semiconductors, 2014, 35(7): 074007. doi: 10.1088/1674-4926/35/7/074007 J B Cheng, X J Xia, T Jian, Y F Guo, S J Yu, H Yang. Electric field optimized LDMOST using multiple decrescent and reverse charge regions[J]. J. Semicond., 2014, 35(7): 074007. doi: 10.1088/1674-4926/35/7/074007.Export: BibTex EndNote
      Citation:
      Jianbing Cheng, Xiaojuan Xia, Tong Jian, Yufeng Guo, Shujuan Yu, Hao Yang. Electric field optimized LDMOST using multiple decrescent and reverse charge regions[J]. Journal of Semiconductors, 2014, 35(7): 074007. doi: 10.1088/1674-4926/35/7/074007

      J B Cheng, X J Xia, T Jian, Y F Guo, S J Yu, H Yang. Electric field optimized LDMOST using multiple decrescent and reverse charge regions[J]. J. Semicond., 2014, 35(7): 074007. doi: 10.1088/1674-4926/35/7/074007.
      Export: BibTex EndNote

      Electric field optimized LDMOST using multiple decrescent and reverse charge regions

      doi: 10.1088/1674-4926/35/7/074007
      Funds:

      the Postdoctoral Science Foundation of China 2013M541585

      the National Natural Science Foundation of China 61274080

      Project supported by the National Natural Science Foundation of China (No. 61274080), the Natural Science Foundation of Jiangsu Province (No. BK2011753), and the Postdoctoral Science Foundation of China (No. 2013M541585)

      the Natural Science Foundation of Jiangsu Province BK2011753

      More Information
      • Corresponding author: Cheng Jianbing, Email:chengjianb@163.com
      • Received Date: 2013-12-25
      • Revised Date: 2014-02-05
      • Published Date: 2014-07-01

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