Fig. 1.
Hole concentration distribution along the central line of the channel at low injection.
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Chunjuan Liu, Zaixing Wang, Yongshun Wang. Physical effect of carrier distribution in the channel of static induction thyristor[J]. Journal of Semiconductors, 2014, 35(8): 084005. doi: 10.1088/1674-4926/35/8/084005
C J Liu, Z X Wang, Y S Wang. Physical effect of carrier distribution in the channel of static induction thyristor[J]. J. Semicond., 2014, 35(8): 084005. doi: 10.1088/1674-4926/35/8/084005.
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Physical effect of carrier distribution in the channel of static induction thyristor
doi: 10.1088/1674-4926/35/8/084005
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Abstract
The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor (SITH) have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution controlling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed. -
References
[1] Wang Y S, Wu R, Liu C J, et al. Improvement on high current performance of static induction transistor. Chinese Journal Semiconductors, 2007, 28(8):12[2] Wang Y S, Li H R, Wu R, et al. Mechanism of reverse snapback on I-V characteristics of power SITHs with buried gate structure. Journal of Semiconductors, 2008, 29(3):461 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=07092004&flag=1[3] Wang Y S, Li H R, Wang Z T, et al. Improvements on high voltage performance of power static induction transistors. Journal of Semiconductors, 2009, 30(10):104003 doi: 10.1088/1674-4926/30/10/104003[4] Nishizawa J I, Ohmi T, Chen H. Analysis of static characteristics of a BSIT. IEEE Trans Electron Devices, 1982, 29:1233 doi: 10.1109/T-ED.1982.20862[5] Wang Y S, Wu R, Liu C J, et al. Researches on the injected charge potential barrier occurring in the static induction transistor in the high current region. Semicond Sci Tech, 2008, 23:152 http://adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008SeScT..23b5005W&db_key=PHY&link_type=ABSTRACT&high=32542[6] Li S Y. Action theory of the static induction devices. Lanzhou:Lanzhou University Press, 1996(in Chinese)[7] Suzuki M, Sawaki N, Iwata K, et al. Current distribution at the lateral spreading of electron-hole plasma in a thyristor. IEEE Trans Electron Devices, 1982, 29(8):1222 doi: 10.1109/T-ED.1982.20859[8] Liu C J, Liu S, Bai Y J. Switching performances of static induction thyristor with buried-gate structure. Sci China Inf Sci, 2014, 57(8):062401 http://kns.cnki.net/KCMS/detail/detail.aspx?filename=jfxg201406014&dbname=CJFD&dbcode=CJFQ[9] Liu C J, Liu S, Bai Y J. Dependence of transient performance on potential distribution in a static induction thyristor channel. Journal of Semiconductors, 2012, 33(4):044009 doi: 10.1088/1674-4926/33/4/044009[10] Tango H, Nishijawa J I. Potential, field and carrier distribution in the channel of junction field-effect transistors. Solid-State Electron, 1970, 13(2):139 doi: 10.1016/0038-1101(70)90044-4 -
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