Fig. 1.
Schematic plot of sensor.
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| Citation: |
Sainan Li, Ting Liang, Wei Wang, Yingping Hong, Tingli Zheng, Jijun Xiong. A novel SOI pressure sensor for high temperature application[J]. Journal of Semiconductors, 2015, 36(1): 014014. doi: 10.1088/1674-4926/36/1/014014
S N Li, T Liang, W Wang, Y P Hong, T L Zheng, J J Xiong. A novel SOI pressure sensor for high temperature application[J]. J. Semicond., 2015, 36(1): 014014. doi: 10.1088/1674-4926/36/1/014014.
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A novel SOI pressure sensor for high temperature application
doi: 10.1088/1674-4926/36/1/014014
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Abstract
The silicon on insulator (SOI) high temperature pressure sensor is a novel pressure sensor with high-performance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper. The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350 ℃ in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors.-
Keywords:
- SOI,
- high temperature pressure sensor,
- doping concentration,
- power
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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