SEMICONDUCTOR PHYSICS

Coupling effect of quantum wells on band structure

Jie Chen and Weiyou Zeng

+ Author Affiliations

 Corresponding author: Jie Chen, jiechen2004@126.com; zengwy lx@huat.edu.cn

PDF

Abstract: The coupling effects of quantum wells on band structure are numerically investigated by using the Matlab programming language.In a one dimensional finite quantum well with the potential barrier V0, the calculation is performed by increasing the number of inserted barriers with the same height Vb, and by, respectively, varying the thickness ratio of separated wells to inserted barriers and the height ratio of Vb to V0.Our calculations show that coupling is strongly influenced by the above parameters of the inserted barriers and wells.When these variables change, the width of the energy bands and gaps can be tuned.Our investigation shows that it is possible for quantum wells to achieve the desired width of the bands and gaps.

Key words: couplingquantum wellsband structure



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
Fig. 1.  The model of QWs.

Fig. 2.  Coupled levels with the lower energy as function of the number of inserted barriers ($V_{\rm b}=600E_0$) in a finite single quantum well with $V_{0}=1000E_0$.

Fig. 3.  First 18 energy levels and formation of three bands in 5-period multiple QWs as function of the ratio $w/b$ for $V_{\rm b}=600E_0$ and $V_{\rm b}=1000E_0$.

Fig. 4.  First three bands,including 18 energy levels and their corresponding wavefunctions of 5-period multiple QWs as function of the position $z/L$ for $V_{\rm b}=600E_0$ and $V_0=1000E_0$.

Fig. 5.  First 18 energy levels and formation of three bands in 5-period multiple QWs as function of the ratio $V_{\rm b}/V_0$ for $V_0=1000E_0$.

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2375 Times PDF downloads: 17 Times Cited by: 0 Times

    History

    Received: 07 November 2014 Revised: Online: Published: 01 October 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Jie Chen, Weiyou Zeng. Coupling effect of quantum wells on band structure[J]. Journal of Semiconductors, 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005 J Chen, W Y Zeng. Coupling effect of quantum wells on band structure[J]. J. Semicond., 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005.Export: BibTex EndNote
      Citation:
      Jie Chen, Weiyou Zeng. Coupling effect of quantum wells on band structure[J]. Journal of Semiconductors, 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005

      J Chen, W Y Zeng. Coupling effect of quantum wells on band structure[J]. J. Semicond., 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005.
      Export: BibTex EndNote

      Coupling effect of quantum wells on band structure

      doi: 10.1088/1674-4926/36/10/102005
      More Information

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return