SEMICONDUCTOR DEVICES

Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening

Xinhong Hong1, , Liyang Pan1, , Wendi Zhang1, Dongmei Ji2, Dong Wu1, Chen Shen2 and Jun Xu1

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 Corresponding author: Hong Xinhong, Email: hongxh629@163.com;; Pan Liyang, Email: panly@tsinghua.edu.cn

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Abstract: A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size.

Key words: SRAMSEESEUradiation hardening3-D simulation



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Fig. 1.  (a) Schematic of 4T SRAM cell. (b) Simulation results of 4T-cell operations.

Fig. 2.  Principle of the duplication redundancy hardening method.

Fig. 3.  (Color online) (a) The layout of 4T-cell and 3D simulation results of 4T-cell (b) when it stores logic '1' with incident particle C,$E$ $=$ 80 MeV,LET $=$ 1.73 MeV$\cdot$cm$^{2}$/mg,(c) when it stores logic '1' with striking particle Ti,$E$ $=$ 149 MeV,LET $=$ 22.6 MeV$\cdot$cm$^{2}$/mg,and (d) when it stores logic '1' with striking particle Cu,$E$ $=$ 161 MeV,LET $=$ 33.4 MeV$\cdot$cm$^{2}$/mg.

Fig. 4.  (Color online) Schematic of 4T-cell in SEU effect.

Fig. 5.  (Color online) (a) Top view of 3-D model of 4T-cell. (b) The distribution of electron density when the particle has just struck the cell.

Fig. 6.  (Color online) The well potential distribution of 3-D model of the 4T-cell after the particle strikes the cell at (a) 10 ps and (b) 30~ps.

Fig. 7.  (a) Integral LET spectrum of proton and heavy ions in GEO during solar minimum,and behind 3 mm aluminum shielding. (b) The SEU rate under different LET$_{\rm th}$ in GEO.

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Xinhong Hong, Liyang Pan, Wendi Zhang, Dongmei Ji, Dong Wu, Chen Shen, Jun Xu. Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening[J]. Journal of Semiconductors, 2015, 36(11): 114003. doi: 10.1088/1674-4926/36/11/114003 X H Hong, L Y Pan, W D Zhang, D M Ji, D Wu, C Shen, J Xu. Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening[J]. J. Semicond., 2015, 36(11): 114003. doi: 10.1088/1674-4926/36/11/114003.Export: BibTex EndNote
      Citation:
      Xinhong Hong, Liyang Pan, Wendi Zhang, Dongmei Ji, Dong Wu, Chen Shen, Jun Xu. Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening[J]. Journal of Semiconductors, 2015, 36(11): 114003. doi: 10.1088/1674-4926/36/11/114003

      X H Hong, L Y Pan, W D Zhang, D M Ji, D Wu, C Shen, J Xu. Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening[J]. J. Semicond., 2015, 36(11): 114003. doi: 10.1088/1674-4926/36/11/114003.
      Export: BibTex EndNote

      Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening

      doi: 10.1088/1674-4926/36/11/114003
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