SEMICONDUCTOR INTEGRATED CIRCUITS

The single-event effect evaluation technology for nano integrated circuits

Hongchao Zheng1, , Yuanfu Zhao1, Suge Yue1, 2, Long Fan1, Shougang Du1, Maoxin Chen1 and Chunqing Yu1

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 Corresponding author: Zheng Hongchao, Email: hongchao_zheng@163.com

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Abstract: Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for single-event transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and classified in detail. The difficulties in SEE testing are discussed as well as the development direction of test technology, with emphasis placed on the experimental evaluation of a nano circuit under heavy ion, proton, and laser irradiation. The conclusions in this paper are based on many years of testing at accelerator facilities and our present understanding of the mechanisms for SEEs, which have been well verified experimentally.

Key words: single-event effectheavy ion testradiation evaluation method



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Fig. 1.  Test flow of heavy-ion SEUs.

Fig. 2.  SEU/SET test system diagram of nano-scale IC.

Fig. 3.  The evaluation method of single event effects under a certain application.

Fig. 4.  The problems of nano circuits test.

Table 1.   Comparison of evaluation and experiment cross section results.

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Hongchao Zheng, Yuanfu Zhao, Suge Yue, Long Fan, Shougang Du, Maoxin Chen, Chunqing Yu. The single-event effect evaluation technology for nano integrated circuits[J]. Journal of Semiconductors, 2015, 36(11): 115002. doi: 10.1088/1674-4926/36/11/115002 H C Zheng, Y F Zhao, S G Yue, L Fan, S G Du, M X Chen, C Q Yu. The single-event effect evaluation technology for nano integrated circuits[J]. J. Semicond., 2015, 36(11): 115002. doi: 10.1088/1674-4926/36/11/115002.Export: BibTex EndNote
      Citation:
      Hongchao Zheng, Yuanfu Zhao, Suge Yue, Long Fan, Shougang Du, Maoxin Chen, Chunqing Yu. The single-event effect evaluation technology for nano integrated circuits[J]. Journal of Semiconductors, 2015, 36(11): 115002. doi: 10.1088/1674-4926/36/11/115002

      H C Zheng, Y F Zhao, S G Yue, L Fan, S G Du, M X Chen, C Q Yu. The single-event effect evaluation technology for nano integrated circuits[J]. J. Semicond., 2015, 36(11): 115002. doi: 10.1088/1674-4926/36/11/115002.
      Export: BibTex EndNote

      The single-event effect evaluation technology for nano integrated circuits

      doi: 10.1088/1674-4926/36/11/115002
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      • Corresponding author: Zheng Hongchao, Email: hongchao_zheng@163.com
      • Received Date: 2015-06-11
      • Accepted Date: 2015-07-23
      • Published Date: 2015-01-25

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