SEMICONDUCTOR INTEGRATED CIRCUITS

Experimental study on the single event effects in pulse width modulators by laser testing

Wen Zhao1, , Xiaoqiang Guo1, Wei Chen1, Hongxia Guo1, Dongsheng Lin1, Hanning Wang2, Yinhong Luo1, Lili Ding1 and Yuanming Wang1

+ Author Affiliations

 Corresponding author: Zhao Wen, Email: zhaowen@nint.ac.cn

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Abstract: This paper presents single event effect (SEE) characteristics of UC1845AJ pulse width modulators (PWMs) by laser testing. In combination with analysis to map PWM circuitry in the microchip dies, the typical SEE response waveforms for laser pulses located in different circuit blocks of UC1845AJ are obtained and the SEE mechanisms are analyzed. The laser SEE test results show that there are some differences in the SEE mechanisms of different circuit blocks, and phase shifts or changes in the duty cycles of few output pulses are the main SEE behaviors for UC1845AJ. In addition, a new SEE behavior which manifests as changes in the duty cycles of many output pulses is revealed. This means that an SEE hardened design should be considered.

Key words: laser simulationpulse width modulatorsingle event effect



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Fig. 1.  Block diagram of the UC1845AJ[11].

Fig. 2.  Test circuit for the UC1845AJ[11].

Fig. 3.  Photomicrograph of the UC1845AJ.

Fig. 4.  SEE response waveforms for a laser pulse located in T latch block.

Fig. 5.  SEE response waveforms for laser pulses located at the positions labeled (a) TQ37_E and (b) TQ18_B in OSC block.

Fig. 6.  SEE response waveforms for laser pulses located in (a) current sense comparator block and (b) error amp block.

Fig. 7.  SEE response waveforms for a laser pulse located at the R input of SR latch block.

Fig. 8.  SEE response waveforms for a laser pulse located at the collector region of the bipolar transistor labeled TI9 in UVLO block.

Fig. 9.  SEE response waveforms for a laser pulse located at the base region of the bipolar transistor labeled TI28 in reference voltage block.

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Wen Zhao, Xiaoqiang Guo, Wei Chen, Hongxia Guo, Dongsheng Lin, Hanning Wang, Yinhong Luo, Lili Ding, Yuanming Wang. Experimental study on the single event effects in pulse width modulators by laser testing[J]. Journal of Semiconductors, 2015, 36(11): 115008. doi: 10.1088/1674-4926/36/11/115008 W Zhao, X Q Guo, W Chen, H X Guo, D S Lin, H N Wang, Y H Luo, L L Ding, Y M Wang. Experimental study on the single event effects in pulse width modulators by laser testing[J]. J. Semicond., 2015, 36(11): 115008. doi: 10.1088/1674-4926/36/11/115008.Export: BibTex EndNote
      Citation:
      Wen Zhao, Xiaoqiang Guo, Wei Chen, Hongxia Guo, Dongsheng Lin, Hanning Wang, Yinhong Luo, Lili Ding, Yuanming Wang. Experimental study on the single event effects in pulse width modulators by laser testing[J]. Journal of Semiconductors, 2015, 36(11): 115008. doi: 10.1088/1674-4926/36/11/115008

      W Zhao, X Q Guo, W Chen, H X Guo, D S Lin, H N Wang, Y H Luo, L L Ding, Y M Wang. Experimental study on the single event effects in pulse width modulators by laser testing[J]. J. Semicond., 2015, 36(11): 115008. doi: 10.1088/1674-4926/36/11/115008.
      Export: BibTex EndNote

      Experimental study on the single event effects in pulse width modulators by laser testing

      doi: 10.1088/1674-4926/36/11/115008
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      The Authors would like to thank the Innovative & Superior Technology Company for their analysis of UC1845AJ.

      More Information
      • Corresponding author: Zhao Wen, Email: zhaowen@nint.ac.cn
      • Received Date: 2015-06-11
      • Accepted Date: 2015-07-15
      • Published Date: 2015-01-25

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