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Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs

Kanjalochan Jena, Raghunandan Swain and T. R. Lenka

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 Corresponding author: T. R. Lenka, E-mail:

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Abstract: A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AlInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. AlN/GaN and AlInN/GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF/μm2 with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance leads to improved RF performance and hence reduced propagation delay.

Key words: 2DEGGaNMOSHEMTquantum capacitanceTCAD



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Fig. 1.  Proposed MOSHEMT structure.

Fig. 2.  Equivalent circuit diagrams for gate capacitance in AlN/GaN MOSHEMT.

Fig. 3.  Conduction band diagram in strong inversion.

Fig. 4.  Conduction energy band profile for a metal/oxide/AlN/GaN interface.

Fig. 5.  Plot showing gate capacitance versus barrier thickness for AlN/GaN MOSHEMT.

Fig. 6.  Plot showing gate capacitance versus gate voltage for different barrier thicknesses of AlN/GaN MOSHEMT.

Fig. 7.  Plot showing gate capacitance versus gate voltage for different barrier thicknesses of Al$_{0.83}$In$_{0.17}$N/GaN MOSHEMT.

Fig. 8.  Plot showing gate capacitance versus gate voltage for different barrier thicknesses of AlGaN/GaN MOSHEMT.

Fig. 9.  Plot showing gate capacitance versus barrier thickness.

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Table 1.   List of model parameters.

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    Received: 27 July 2014 Revised: Online: Published: 01 March 2015

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      Kanjalochan Jena, Raghunandan Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. Journal of Semiconductors, 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003 K Jena, Raghunandan Swain and A Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. J. Semicond., 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003.Export: BibTex EndNote
      Citation:
      Kanjalochan Jena, Raghunandan Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. Journal of Semiconductors, 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003

      K Jena, Raghunandan Swain and A Swain, T. R. Lenka. Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs[J]. J. Semicond., 2015, 36(3): 034003. doi: 10.1088/1674-4926/36/3/034003.
      Export: BibTex EndNote

      Impact of barrier thickness on gate capacitance——modeling and comparative analysis of GaN based MOSHEMTs

      doi: 10.1088/1674-4926/36/3/034003
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