SEMICONDUCTOR DEVICES

Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

Xiaoli Tian1, 2, Jiang Lu1, Yuan Teng1, Wenliang Zhang1, , Shuojin Lu1, 2 and Yangjun Zhu1, 2

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 Corresponding author: Wenliang Zhang, E-mail: zhuyangjun@ime.ac.cn

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Abstract: The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N+ buffer layer, the other is decreasing the implant dose of the P+ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.

Key words: avalanche breakdownsnap backbipolar transistor gainhigh voltage IGBT



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Fig. 1.  Structure and equivalent circuit of IGBT.

Fig. 2.  Cross-section of carrier distribution of high voltage IGBT in the static blocking state.

Fig. 3.  The breakdown waveform results of the 4.5 kV IGBT with different backside designs. (a) Original backside structure. (b) The optimized backside structure.

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Table 1.   Process technology comparison of original structure and optimization structure.

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    Received: 28 August 2014 Revised: Online: Published: 01 March 2015

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      Xiaoli Tian, Jiang Lu, Yuan Teng, Wenliang Zhang, Shuojin Lu, Yangjun Zhu. Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT[J]. Journal of Semiconductors, 2015, 36(3): 034008. doi: 10.1088/1674-4926/36/3/034008 X L Tian, J Lu, Y Teng, W L Zhang, S J Lu, Y J Zhu. Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT[J]. J. Semicond., 2015, 36(3): 034008. doi: 10.1088/1674-4926/36/3/034008.Export: BibTex EndNote
      Citation:
      Xiaoli Tian, Jiang Lu, Yuan Teng, Wenliang Zhang, Shuojin Lu, Yangjun Zhu. Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT[J]. Journal of Semiconductors, 2015, 36(3): 034008. doi: 10.1088/1674-4926/36/3/034008

      X L Tian, J Lu, Y Teng, W L Zhang, S J Lu, Y J Zhu. Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT[J]. J. Semicond., 2015, 36(3): 034008. doi: 10.1088/1674-4926/36/3/034008.
      Export: BibTex EndNote

      Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

      doi: 10.1088/1674-4926/36/3/034008
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      Project supported by the National Major Science and Technology Special Project of China (No. 2011ZX02503-003).

      More Information
      • Corresponding author: E-mail: zhuyangjun@ime.ac.cn
      • Received Date: 2014-08-28
      • Accepted Date: 2014-09-11
      • Published Date: 2015-01-25

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