Fig. 1.
Imaginary part of $Y$-parameters for AlGaN/GaN HEMT at bias conditions of $V_{\rm gs}$ $=$ $-6$ V and $V_{\rm ds}$ $=$ 0 V. The inset shows the device photo of AlGaN/GaN HEMT with a gate width of 2 $\times $ 50 $\mu $m.
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Jiangfeng Du, Peng Xu, Kang Wang, Chenggong Yin, Yang Liu, Zhihong Feng, Shaobo Dun, Qi Yu. Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances[J]. Journal of Semiconductors, 2015, 36(3): 034009. doi: 10.1088/1674-4926/36/3/034009
J F Du, P Xu, K Wang, C G Yin, Y Liu, Z H Feng, S B Dun, Q Yu. Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances[J]. J. Semicond., 2015, 36(3): 034009. doi: 10.1088/1674-4926/36/3/034009.
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Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances
doi: 10.1088/1674-4926/36/3/034009
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Abstract
Given the coplanar waveguide (CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S-parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model.-
Keywords:
- AlGaN/GaN HEMT,
- coplanar waveguide effect,
- modeling,
- small signal,
- S-parameters
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] -
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