SEMICONDUCTOR TECHNOLOGY

Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process

Yi Hu1, , Yan Li2, Yuling Liu2 and Yangang He2

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 Corresponding author: Yi Hu, E-mail: breaker1001@sina.com

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Abstract: We observed and analyzed the acid and HEBUT alkaline of Cu chemical mechanical polishing (CMP) slurry to evaluate their effects. Material analysis has shown that the planarity surfaces and the removal rate of alkaline slurry are better than the acid slurry during metal CMP processes. The global surface roughness and the small-scale surface roughness by 10 × 10 μm2 of copper film polished by the SVTC slurry are 1.127 nm and 2.49 nm. However, it is found that the surface roughnesses of copper films polished by the HEBUT slurry are 0.728 nm and 0.215 nm. All other things being equal, the remaining step heights of copper films polished by the SVTC slurry and HEBUT slurry are respectively 150 nm and 50 nm. At the end of the polishing process, the dishing heights of the HEBUT slurry and the SVTC slurry are approximately both 30 nm, the erosion heights of the HEBUT slurry and the SVTC slurry are approximately both 20 nm. The surface states of the copper film after CMP are tested, and the AFM results of two samples are obviously seen. The surface polished by SVTC slurry shows many spikes. This indicates that the HEBUT alkaline slurry is promising for inter-level dielectric (ILD) applications in ultra large-scale integrated circuits (ULSI) technology.

Key words: alkaline slurrychemical mechanical polishingremove rateroughnessdishing and erosion



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Fig. 1.  The structure of 200 mm MIT854.

Fig. 2.  Particle size distribution of nano-SiO$_{2}$.

Fig. 3.  Morphology of the complex produced by the CMP process.

Fig. 4.  Morphology of the silica gel.

Fig. 5.  (Color online) Global surface roughness of copper film post CMP. (a) SVTC acid slurry. (b) HEBUT alkaline slurry.

Fig. 6.  (Color online) Small-scale surface roughness of copper film post CMP. (a) SVTC acid slurry. (b) HEBUT alkaline slurry.

Fig. 7.  Step height comparison of copper films polished with each slurry.

Fig. 8.  Dishing and erosion comparison. (a) Dishing, polished by SVTC slurry. (b) Dishing, polished by HEBUT slurry. (c) Erosion, polished by SVTC slurry. (d) Erosion, polished by HEBUT slurry.

Fig. 9.  (Color online) Roughness of wafers. (a) 0 h after polishing, SVTC slurry. (b) 96 h after polishing, SVTC slurry. (c) 0 h after polishing, HEBUT slurry. (d) 96 h after polishing, HEBUT slurry.

Table 1.   Corresponding parameters in the CMP process.

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Table 2.   Comparison data in Cu wafer CMP polishing experiments.

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    Received: 13 August 2014 Revised: Online: Published: 01 March 2015

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      Yi Hu, Yan Li, Yuling Liu, Yangang He. Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process[J]. Journal of Semiconductors, 2015, 36(3): 036001. doi: 10.1088/1674-4926/36/3/036001 Y Hu, Y Li, Y L Liu, Y G He. Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process[J]. J. Semicond., 2015, 36(3): 036001. doi: 10.1088/1674-4926/36/3/036001.Export: BibTex EndNote
      Citation:
      Yi Hu, Yan Li, Yuling Liu, Yangang He. Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process[J]. Journal of Semiconductors, 2015, 36(3): 036001. doi: 10.1088/1674-4926/36/3/036001

      Y Hu, Y Li, Y L Liu, Y G He. Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process[J]. J. Semicond., 2015, 36(3): 036001. doi: 10.1088/1674-4926/36/3/036001.
      Export: BibTex EndNote

      Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process

      doi: 10.1088/1674-4926/36/3/036001
      Funds:

      Project supported by the Special Project Items No. 2 in National Long-Term Technology Development Plan (No. 2009ZX02308), the Doctoral Program Foundation of Xinjiang Normal University Plan (No. XJNUBS1226), the Key Laboratory of Coal Gasification, Ministry of Education, and the Inorganic Chemistry Key Disciplines of Xinjiang Normal University.

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      • Corresponding author: E-mail: breaker1001@sina.com
      • Received Date: 2014-08-13
      • Accepted Date: 2014-10-03
      • Published Date: 2015-01-25

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