Fig. 1.
SEM images of (a) Ni/AuGe/Pt/Au and (b) Ni/AuGe/Au annealed at
420 C for 60 s.
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| Citation: |
Yong Wang, Dandan Liu, Guoqing Feng, Zhen Ye, Zhanqi Gao, Xiaohua Wang. Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs[J]. Journal of Semiconductors, 2015, 36(3): 036002. doi: 10.1088/1674-4926/36/3/036002
Y Wang, Dandan Liu and A Liu, G Q Feng, Z Ye, Z Q Gao, X H Wang. Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs[J]. J. Semicond., 2015, 36(3): 036002. doi: 10.1088/1674-4926/36/3/036002.
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Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs
doi: 10.1088/1674-4926/36/3/036002
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Abstract
The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact resistivity of multi-layer metals were characterized, with and without the Pt diffusion barrier layer for comparison. The SEM and EDS measurements show the Pt diffusion barrier layer can block the interdiffusion of atoms in multi-layer metals, and improve the surface morphology. The TLM results show that the samples with a Pt diffusion barrier layer have uniform ohmic contact resistance, indicating that the Pt diffusion barrier layer can increase the repetition and uniformity of ohmic contact to n-GaAs, and improve the thermal stability and reliability of GaAs-based devices.-
Keywords:
- GaAs,
- ohmic contact,
- diffusion barrier layer
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References
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