J. Semicond. > 2015, Volume 36 > Issue 4 > 043002, doi: 10.1088/1674-4926/36/4/043002
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SEMICONDUCTOR MATERIALS

Spin synthesis of monolayer of SiO2 thin films

S. S. Shinde, S. Park and J. Shin

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 Corresponding author: S. S. Shinde, E-mail: physics.sambhaji2006@gmail.com

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Abstract: The highly ordered monolayer of submicron size silica (SiO2) particles (235 nm) is developed on p-silicon by using three-step spin-coating in colloidal suspension, which has significant potential in various applications. The influence of three-step spin speeds, spinning time, acceleration time between different steps, concentration of SiO2 particles in the solution, solution quantity, and the ambient humidity (relative humidity) on the properties of monolayer SiO2 are studied in order to achieve a large area monolayer film. A relatively high surface coverage and uniform monolayer film of SiO2 particles in the range of 85%-90% are achieved by appropriate control of the preparative parameters. We conclude that this method can be useful in industrial applications, because of the fabrication speed, surface coverage and cost of the process.

Key words: thin films, spin synthesis, electron microscopy



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Fig. 1.  Schematic illustration of possible phenomena that occurred during three-step spin-coating method of SiO$_{2}$ particles.

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Fig. 2.  SEM images of substrate coated with SiO$_{2}$ particles of 235 nm at 200-1000-5000 rpm for 30-60-20 s for first, second and third steps respectively, (a) without and (b) with substrate treatment as given in experimental section.

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Fig. 3.  SEM images of SiO$_{2}$ particles monolayer on the p-silicon wafer fabricated at different first step spin rate from 100-1000 rpm.

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Fig. 4.  SEM images of SiO$_{2}$ particles monolayer on the p-silicon wafer fabricated at different second step spin rate from 500-3000 rpm.

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Fig. 5.  SEM images of SiO$_{2}$ particles monolayer on the p-silicon wafer deposited for various third step spin rate from 2000-8000 rpm.

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Fig. 6.  SEM images of SiO$_{2}$ particles monolayer fabricated at different first step spinning time ranging from 5-90 s.

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Fig. 7.  SEM images of SiO$_{2}$ particles monolayer fabricated at different second step spinning time ranging from 60-900 s.

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Fig. 8.  SEM images of SiO$_{2}$ particles monolayer developed at different third step spinning time ranging from 5-60 s.

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Fig. 9.  SEM images of SiO$_{2}$ particles monolayer fabricated at various acceleration from 25-1000 rps, (FSR-200 rpm, SSR-1000 rpm, TSR-2000 rpm) and time (FST-60 s, SST-120 s, TST-10 s) [where FSR, SSR, TSR are first, second and third step spin rate and FST, SST, TST are first, second and third step spinning time respectively].

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Fig. 10.  SEM images of SiO$_{2}$ particles monolayer fabricated for different solution quantity (50-500 $\mu $L) keeping spin rates (FSR: 200 rpm, SSR: 1000 rpm, TSR: 2000 rpm) and time (FST: 60 s, SST: 120 s, TST: 10 s).

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Fig. 11.  SEM images of SiO$_{2}$ particles monolayer fabricated at various concentration of SiO$_{2}$ particles in the solution (20-50 mg/mL) (FSR: 200 rpm, SSR: 1000 rpm, TSR: 2000 rpm) and time (FST: 60 s, SST: 120 s, TST: 10 s).

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    Received: 16 September 2014 Revised: Online: Published: 01 April 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(4): 043002
      S. S. Shinde, S. Park, J. Shin. Spin synthesis of monolayer of SiO2 thin films[J]. Journal of Semiconductors, 2015, 36(4): 043002. doi: 10.1088/1674-4926/36/4/043002 S. S. Shinde, S. Park, J. Shin. Spin synthesis of monolayer of SiO2 thin films[J]. J. Semicond., 2015, 36(4): 043002. doi: 10.1088/1674-4926/36/4/043002.Export: BibTex EndNote
      Citation:
      S. S. Shinde, S. Park, J. Shin. Spin synthesis of monolayer of SiO2 thin films[J]. Journal of Semiconductors, 2015, 36(4): 043002. doi: 10.1088/1674-4926/36/4/043002

      S. S. Shinde, S. Park, J. Shin. Spin synthesis of monolayer of SiO2 thin films[J]. J. Semicond., 2015, 36(4): 043002. doi: 10.1088/1674-4926/36/4/043002.
      Export: BibTex EndNote
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      Spin synthesis of monolayer of SiO2 thin films

      doi: 10.1088/1674-4926/36/4/043002

      • Department of Physics, Shivaji University, Kolhapur- 416001, India

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      • Corresponding author: E-mail: physics.sambhaji2006@gmail.com
      • Received Date: 2014-09-16
      • Accepted Date: 2014-10-08
      • Published Date: 2015-01-25

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