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Simulation of a high-efficiency silicon-based heterojunction solar cell

Jian Liu, Shihua Huang and Lü He

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 Corresponding author: Shihua Huang, E-mail: huangshihua@zjnu.cn

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Abstract: The basic parameters of a-Si:H/c-Si heterojunction solar cells, such as layer thickness, doping concentration, a-Si:H/c-Si interface defect density, and the work functions of the transparent conducting oxide (TCO) and back surface field (BSF) layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si:H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p+-a-Si:H/Ag solar cell, a photoelectric conversion efficiency of 27.07% (VOC: 749 mV, JSC: 42.86 mA/cm2, FF: 84.33%) was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si:H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer (HIT) solar cell manufacturing.

Key words: simulationheterojunction solar cellstransport properties



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Fig. 1.  A schematic diagram of a n-a-Si:H/i-a-Si:H/p-c-Si/p$^{+}$-a-Si:H/Ag solar cell.

Fig. 2.  (a) $J$-$V$ curves and (b) the corresponding band diagram of the HIT solar cell with or without the insertion of an i-a-Si:H buffer layer or a p$^{+}$-a-Si:H BSF layer.

Fig. 3.  Variation of $V_{\rm OC}$, $J_{\rm SC}$, FF and $\eta$ as a function of the thickness of (a) the p-a-Si:H emitter, (b) thei-a-Si:H buffer layer, (c) the p-c-Si base, and (d) the p$^{+}$-a-Si:H BSF layer for the HIT solar cell.

Fig. 4.  IQE characteristics of the HIT solar cell at different thicknesses of (a) the n-a-Si emitter layer, (b) the i-a-Si:H buffer layer, and (c) the p-c-Si base, respectively.

Fig. 5.  Variation of $V_{\rm OC}$, $J_{\rm SC}$, FF and $\eta$ as a function of the doping concentration of (a) the n-a-Si:H emitter layer, (b) the p-c-Si base, and (c) the p$^{+}$-a-Si:H BSF layer for the HIT solar cell.

Fig. 6.  (a) $J$-$V$ curves of the HIT solar cell with different doping concentration for the n-a-Si:H emitter layer, the inset shows the band diagrams of the cell with a low and highly doped n-a-Si:H emitter layer under 100 mW/cm$^{2}$ illumination. (b) IQE curves of the simulated cell with different p-c-Si base doping concentrations.

Fig. 7.  Variation of $V_{\rm OC}$, $J_{\rm SC}$, FF and $\eta$ as a function of $D_{\rm it}$ for the HIT solar cell.

Fig. 8.  (a) Variation of $V_{\rm OC}$, $J_{\rm SC}$, FF and $\eta$ as a function of $W_{\rm TCO}$ for the HIT solar cell. (b) The energy band diagram of the simulated solar cell with $W_{\rm TCO}$ $=$ 4.0 eV and 4.5 eV, respectively.

Fig. 9.  $J$-$V$ curves of the HIT solar cell with optimized parameters.

Table 1.   The main parameters for the simulation.

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Table 2.   The optimized parameters for the HIT solar cell.

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    Received: 17 September 2014 Revised: Online: Published: 01 April 2015

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      Jian Liu, Shihua Huang, Lü He. Simulation of a high-efficiency silicon-based heterojunction solar cell[J]. Journal of Semiconductors, 2015, 36(4): 044010. doi: 10.1088/1674-4926/36/4/044010 J Liu, S H Huang, L He. Simulation of a high-efficiency silicon-based heterojunction solar cell[J]. J. Semicond., 2015, 36(4): 044010. doi: 10.1088/1674-4926/36/4/044010.Export: BibTex EndNote
      Citation:
      Jian Liu, Shihua Huang, Lü He. Simulation of a high-efficiency silicon-based heterojunction solar cell[J]. Journal of Semiconductors, 2015, 36(4): 044010. doi: 10.1088/1674-4926/36/4/044010

      J Liu, S H Huang, L He. Simulation of a high-efficiency silicon-based heterojunction solar cell[J]. J. Semicond., 2015, 36(4): 044010. doi: 10.1088/1674-4926/36/4/044010.
      Export: BibTex EndNote

      Simulation of a high-efficiency silicon-based heterojunction solar cell

      doi: 10.1088/1674-4926/36/4/044010
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      Project supported by the National Natural Science Foundation of China (No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. FDS-KL2011-04), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

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      • Corresponding author: E-mail: huangshihua@zjnu.cn
      • Received Date: 2014-09-17
      • Accepted Date: 2014-11-20
      • Published Date: 2015-01-25

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