SEMICONDUCTOR TECHNOLOGY

A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs

Shuai Feng1, 2, Lichuan Zhao2, Qingzhu Zhang1, 2, Pengpeng Yang1, 2, Zhaoyun Tang2, Cinan Wu1 and Jiang Yan2,

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 Corresponding author: Jiang Yan, E-mail: yanjiang@ime.ac.cn

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Abstract: Extremely thin silicon on insulator p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteristic parameters acquired by TCAD simulation are compared with each other to analyze their electrical performance. The saturated driven currents of implanted doping devices with a 25 nm gate length (Lg) are about 200 μA/μm bigger than the in situ doping devices at the same saturated threshold voltage (Vtsat). Meanwhile the drain-induced barrier lowering (DIBL) and saturated subthreshold swings for implanted doping devices are also 30-50 mV/V and 6.3-9.1 mV/dec smaller than those of in situ doping devices at 25 nm Lg and a 9-11 nm thickness of SOI (Tsi), respectively. The shift of Vtsat with Tsi for in situ doping devices with 15 nm Lg is -31.8 mV/nm, whereas that for in situ doping devices is only -6.8 mV/nm. These outcomes indicate that the devices with implanted doping can produce a more advanced and stable electrical performance.

Key words: implanted dopingin situ dopingTCAD simulationPMOSFETs



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Fig. 1.  The main simulation process flow of the improved implanted doping PMOSFET.

Fig. 2.  The main simulation process flow of the in situ doping PMOSFET.

Fig. 3.  TEM[7] of the actual device.

Fig. 4.  Structure of the simulated device.

Fig. 5.  SS$_{\rm sat}$ and $I_{\rm on}$ as a function of $T_{\rm si}$ for both the implanted doping devices and the in situ doping devices with $L_{\rm g}$ $=$ 25 nm.

Fig. 6.  $V_{\rm tsat}$ and DIBL as a function of $T_{\rm si}$ for both the implanted doping devices and the in situ doping devices with $L_{\rm g}$ $=$ 25 nm.

Fig. 7.  (Color online) Stress distribution along the channel for both the implanted doping devices and the in situ doping devices.

Fig. 8.  (Color online) Stress distribution along the channel for the implanted doping devices before and after removing the dummy polysilicon gate.

Fig. 9.  Energy band variation at the middle channel for both the implanted doping devices andthe in situ doping devices.

Fig. 10.  The doping profile for both the implanted doping devices and the in situ doping devices.

Fig. 11.  Distribution of boron at the middle channel for both implanted and $in situ$ doped devices with 10 nm $T_{\rm si}$ and 25 nm $L_{\rm g}$.

Fig. 12.  SS$_{\rm satas}$ a function of $T_{\rm si}$ for both the implanted doping devices and the in situ doping devices with $L_{\rm g}$ $=$ 25, 20 and 15~nm.

Fig. 13.  $V_{\rm tsat}$ as a function of $T_{\rm si}$ for both the implanted doping devices and the in situ doping devices with $L_{\rm g}$ $=$ 25, 20 and 15 nm.

Fig. 14.  $I_{\rm off}$ versus $I_{\rm on}$ for both the implanted doping devices and the in situ doping devices with different $L_{\rm g}$ and $T_{\rm si}$.

Table 1.   Characteristic values of the actual and simulated devices with $L_{\rm g}$ $=$ 25 nm.

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Table 2.   The specific values of the boron concentration of both the implanted doping and in situ doping devices with 10 nm $T_{\rm si}$ and 25~nm $L_{\rm g}$ in the middle channel.

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    Received: 03 September 2014 Revised: Online: Published: 01 April 2015

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      Shuai Feng, Lichuan Zhao, Qingzhu Zhang, Pengpeng Yang, Zhaoyun Tang, Cinan Wu, Jiang Yan. A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs[J]. Journal of Semiconductors, 2015, 36(4): 046001. doi: 10.1088/1674-4926/36/4/046001 S Feng, L C Zhao, Q Z Zhang, P P Yang, Z Y Tang, C N Wu, J Yan. A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs[J]. J. Semicond., 2015, 36(4): 046001. doi: 10.1088/1674-4926/36/4/046001.Export: BibTex EndNote
      Citation:
      Shuai Feng, Lichuan Zhao, Qingzhu Zhang, Pengpeng Yang, Zhaoyun Tang, Cinan Wu, Jiang Yan. A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs[J]. Journal of Semiconductors, 2015, 36(4): 046001. doi: 10.1088/1674-4926/36/4/046001

      S Feng, L C Zhao, Q Z Zhang, P P Yang, Z Y Tang, C N Wu, J Yan. A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs[J]. J. Semicond., 2015, 36(4): 046001. doi: 10.1088/1674-4926/36/4/046001.
      Export: BibTex EndNote

      A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs

      doi: 10.1088/1674-4926/36/4/046001
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      Projectsupported by the Institute of Microelectronics, Chinese Academy of Sciences.

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      • Corresponding author: E-mail: yanjiang@ime.ac.cn
      • Received Date: 2014-09-03
      • Accepted Date: 2014-11-21
      • Published Date: 2015-01-25

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