SEMICONDUCTOR TECHNOLOGY

Benzotriazole removal on post-Cu CMP cleaning

Jiying Tang1, 2, Yuling Liu1, , Ming Sun1, Shiyan Fan1 and Yan Li1

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 Corresponding author: Yuling Liu, Email: liuyl@jingling.com.cn

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Abstract: This work investigates systematically the effect of FA/O II chelating agent and FA/O I surfactant in alkaline cleaning solutions on benzotriazole (BTA) removal during post-Cu CMP cleaning in GLSI under the condition of static etching. The best detergent formulation for BTA removal can be determined by optimization of the experiments of single factor and compound cleaning solution, which has been further confirmed experimentally by contact angle (CA) measurements. The resulting solution with the best formulation has been measured for the actual production line, and the results demonstrate that the obtained cleaning solution can effectively and efficiently remove BTA, CuO and abrasive SiO2 without basically causing interfacial corrosion. This work demonstrates the possibility of developing a simple, low-cost and environmentally-friendly cleaning solution to effectively solve the issues of BTA removal on post-Cu CMP cleaning in a multi-layered copper wafer.

Key words: chelating agentnon-ionic surfactantBTA removalstatic etching ratecontact angle



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Fig. 1.  Effect of chelating agent concentration on the copper static etching rate.

Fig. 2.  Effect of concentrations of surfactant on the copper static etching rate.

Fig. 3.  Effect of concentrations of chelating agent on the copper static etching rate (surfactant is 2500 ppm).

Fig. 4.  Image of DI water on Cu surface under various treatments.

Fig. 5.  Wafer surface state before and after cleaning.

Table 1.   Polishing process conditions.

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Table 2.   The slurry for magnetic stirring.

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    Received: 26 November 2014 Revised: Online: Published: 01 June 2015

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      Jiying Tang, Yuling Liu, Ming Sun, Shiyan Fan, Yan Li. Benzotriazole removal on post-Cu CMP cleaning[J]. Journal of Semiconductors, 2015, 36(6): 066001. doi: 10.1088/1674-4926/36/6/066001 J Y Tang, Y L Liu, M Sun, S Y Fan, Y Li. Benzotriazole removal on post-Cu CMP cleaning[J]. J. Semicond., 2015, 36(6): 066001. doi: 10.1088/1674-4926/36/6/066001.Export: BibTex EndNote
      Citation:
      Jiying Tang, Yuling Liu, Ming Sun, Shiyan Fan, Yan Li. Benzotriazole removal on post-Cu CMP cleaning[J]. Journal of Semiconductors, 2015, 36(6): 066001. doi: 10.1088/1674-4926/36/6/066001

      J Y Tang, Y L Liu, M Sun, S Y Fan, Y Li. Benzotriazole removal on post-Cu CMP cleaning[J]. J. Semicond., 2015, 36(6): 066001. doi: 10.1088/1674-4926/36/6/066001.
      Export: BibTex EndNote

      Benzotriazole removal on post-Cu CMP cleaning

      doi: 10.1088/1674-4926/36/6/066001
      Funds:

      Project supported by the Major National Science and Technology Special Projects (No. 2009ZX02308).

      More Information
      • Corresponding author: Email: liuyl@jingling.com.cn
      • Received Date: 2014-11-26
      • Accepted Date: 2015-01-28
      • Published Date: 2015-01-25

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