SEMICONDUCTOR MATERIALS

Chemical and electrical properties of (NH4)2S passivated GaSb surface

Dongyan Tao, Yu Cheng, Jingming Liu, Jie Su, Tong Liu, Fengyun Yang, Fenghua Wang, Kewei Cao, Zhiyuan Dong and Youwen Zhao

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 Corresponding author: Dongyan Tao, E-mail: dongyantao@semi.ac.cn

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Abstract: The surface chemical properties of gallium antimonide (GaSb) after ammonium sulfide ((NH4)2S) solution passivation have been studied by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and I-V measurement. An advantage of neutral (NH4)2S + S solution over pure (NH4)2S solution and alkaline (NH4)2S + S solution has been found in the ability to passivate the GaSb surface by contrast and comparison. It has been found that alkaline (NH4)2S + S solution passivation effectively removes oxides of the GaSb surface and forms sulfide products to improve device performance. TOF-SIMS complementally demonstrates that pure (NH4)2S passivation did form sulfide products, which are too soluble to really exist. The lowest roughness determined using a 3D optical profilometer and the highest improved SBD quality proved that neutral (NH4)2S + S solution passivation worked much better in improving the surface properties of GaSb.

Key words: surface passivationGaSbXPSTOF-SIMS



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Fig. 1.  XPS (a) Ga 3d and (b) Sb 3d spectra and simulation results obtained from HCl-etched (sample (a)), pure (NH$_{4})$$_{2}$S solution passivation (sample (b)), alkaline (NH$_{4})$$_{2}$S $+$ S solution passivation (sample (c)) and neutral (NH$_{4})$$_{2}$S $+$ S solution passivation (sample (d)).

Fig. 2.  Comparison of TOF-SIMS positive (-pos) and negative (-neg) mass spectrum obtained from (a) HCl-etched (sample (a)) and (b) pure (NH$_{4})$$_{2}$S solution passivation (sample (b)). The unmarked peak positions are caused by the isotope of Ga and/or Sb, which are not considered during the analysis.

Fig. 3.  Surface topography for HCl-etched (sample (a)), pure (NH$_{4})$$_{2}$S solution passivation (sample (b)), alkaline (NH$_{4})$$_{2}$S $+$ S solution passivation (sample (c)) and neutral (NH$_{4})$$_{2}$S $+$ S solution passivation (sample (d)).

Fig. 4.  $I$-$V$ characteristics of Au/n-GaSb Schottky contacts under forward and reverse bias.

Table 1.   The results of surface roughness recorded at three different locations on each sample.

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    Received: 28 September 2014 Revised: Online: Published: 01 July 2015

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      Dongyan Tao, Yu Cheng, Jingming Liu, Jie Su, Tong Liu, Fengyun Yang, Fenghua Wang, Kewei Cao, Zhiyuan Dong, Youwen Zhao. Chemical and electrical properties of (NH4)2S passivated GaSb surface[J]. Journal of Semiconductors, 2015, 36(7): 073006. doi: 10.1088/1674-4926/36/7/073006 D Y Tao, Y Cheng, J M Liu, J Su, T Liu, F Y Yang, F H Wang, K W Cao, Z Y Dong, Y W Zhao. Chemical and electrical properties of (NH4)2S passivated GaSb surface[J]. J. Semicond., 2015, 36(7): 073006. doi: 10.1088/1674-4926/36/7/073006.Export: BibTex EndNote
      Citation:
      Dongyan Tao, Yu Cheng, Jingming Liu, Jie Su, Tong Liu, Fengyun Yang, Fenghua Wang, Kewei Cao, Zhiyuan Dong, Youwen Zhao. Chemical and electrical properties of (NH4)2S passivated GaSb surface[J]. Journal of Semiconductors, 2015, 36(7): 073006. doi: 10.1088/1674-4926/36/7/073006

      D Y Tao, Y Cheng, J M Liu, J Su, T Liu, F Y Yang, F H Wang, K W Cao, Z Y Dong, Y W Zhao. Chemical and electrical properties of (NH4)2S passivated GaSb surface[J]. J. Semicond., 2015, 36(7): 073006. doi: 10.1088/1674-4926/36/7/073006.
      Export: BibTex EndNote

      Chemical and electrical properties of (NH4)2S passivated GaSb surface

      doi: 10.1088/1674-4926/36/7/073006
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      Project supported by the National Natural Science Foundation of China (No. 61474104).

      More Information
      • Corresponding author: E-mail: dongyantao@semi.ac.cn
      • Received Date: 2014-09-28
      • Accepted Date: 2015-02-02
      • Published Date: 2015-01-25

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