Fig. 1.
Schematic of the encapsulated RF MEMS resonators using Au-Sn bonding. The inset shows an SEM photograph of the two-port disk resonator with 70 nm capacitive gap spacing.
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| Citation: |
Bohua Peng, Wei Luo, Jicong Zhao, Quan Yuan, Jinling Yang, Fuhua Yang. Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator[J]. Journal of Semiconductors, 2015, 36(7): 074010. doi: 10.1088/1674-4926/36/7/074010
B H Peng, W Luo, J C Zhao, Q Yuan, J L Yang, F H Yang. Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator[J]. J. Semicond., 2015, 36(7): 074010. doi: 10.1088/1674-4926/36/7/074010.
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Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator
doi: 10.1088/1674-4926/36/7/074010
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Abstract
This paper presents a high-Q RF MEMS oscillator consisting of a micro-disk resonator and low noise feedback circuits. The oscillator has high frequency stability and low phase noise. The two-port resonator was hermetically encapsulated using low-cost Sn-rich Au-Sn solder bonding, which significantly improves the frequency stability. A low noise oscillator circuit was designed with a two-stage amplifying architecture which effectively improves both the frequency stability and phase noise performance. The measured phase noise is -96 dBc/Hz at 1 kHz offset and -128 dBc/Hz at far-from-carrier offsets. Moreover, the medium-term frequency stability and Allan deviation of the oscillator are ± 4 ppm and 10 ppb, respectively. The oscillator is a promising component in future wireless communication application.-
Keywords:
- MEMS,
- disk resonator,
- oscillator,
- phase noise,
- frequency stability,
- encapsulation
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
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