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Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs

Junwei Yang, Shiwei Feng, Dong Shi and Chunhui Yang

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 Corresponding author: Feng Shiwei, shwfeng@bjut.edu.cn

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Abstract: The transient temperature rise in the active region in AlGaN/GaN high electron mobility transistors (HEMTs) is measured using an electrical method. The original data are smoothed and denoised by a nonparametric fitting algorithm, called locally weighted scatterplot smoothing (LOWESS). The thermal time-constant spectrum is extracted to analyze the physical structure of the heat-conduction path in AlGaN/GaN HEMTs. The thermal time-constant spectra extracted using the LOWESS algorithm are richer and the RC network obtained is greater compared with those with the traditional denoising method (multi-exponential fitting). Thus, the analysis of the heat-flow path is more precise. The results show that the LOWESS nonparametric fitting algorithm can remove noise from measured data better than other methods and can retain the subtle variation tendency of the original discrete data. The thermal time-constant spectra extracted using this method can describe the subtle temperature variations in the AlGaN/GaN HEMT active region. This will help researchers to precisely analyze the layer composition of the heat-flow path.

Key words: AlGaN/GaN HEMTLOWESS algorithmexponential fittingtime-constant spectrumheat-conduction path



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Fig1.  (a) Cross-sectional schematic of an AlGaN/GaN HEMT. (b) Schematic of a packaged sample and the testing environment.

Fig2.  (a) The schematic of the testing system. (b) Calibration curve of the forward $V_{\rm GS}$ for an AlGaN/GaN HEMT with respect to temperature at a current of 1.0 mA. (c) The sequence diagram of measuring the temperature coefficient. (d) The sequence diagram of the testing system.

Fig3.  Channel temperature cooling response curve and partial magnified images at $V_{\rm DS}$ $=$ 5,6,7 and 8 V.

Fig4.  Comparison of the original data,exponential fitting data and LOWESS fitting data at $V_{\rm DS}$ $=$ 7 V.

Fig5.  Comparison between two thermal time-constant spectra after exponential fitting and LOWESS fitting. (a) $V_{\rm DS}$ $=$ 5 V. (b) $V_{\rm DS}$ $=$ 6 V. (c) $V_{\rm DS}$ $=$ 7 V. (d) $V_{\rm DS}$ $=$ 8 V.

Fig6.  Series network model of the Foster thermal resistance and thermal capacitance.

Fig7.  (a) Transient response. (b) Time-constant spectrum.

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    Received: 28 January 2015 Revised: Online: Published: 01 August 2015

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      Junwei Yang, Shiwei Feng, Dong Shi, Chunhui Yang. Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2015, 36(8): 084003. doi: 10.1088/1674-4926/36/8/084003 J W Yang, S W Feng, D Shi, C H Yang. Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs[J]. J. Semicond., 2015, 36(8): 084003. doi: 10.1088/1674-4926/36/8/084003.Export: BibTex EndNote
      Citation:
      Junwei Yang, Shiwei Feng, Dong Shi, Chunhui Yang. Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2015, 36(8): 084003. doi: 10.1088/1674-4926/36/8/084003

      J W Yang, S W Feng, D Shi, C H Yang. Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs[J]. J. Semicond., 2015, 36(8): 084003. doi: 10.1088/1674-4926/36/8/084003.
      Export: BibTex EndNote

      Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs

      doi: 10.1088/1674-4926/36/8/084003
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      • Corresponding author: Feng Shiwei, shwfeng@bjut.edu.cn
      • Received Date: 2015-01-28
      • Accepted Date: 2015-03-16
      • Published Date: 2015-01-25

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