SEMICONDUCTOR INTEGRATED CIRCUITS

A CMOS high resolution, process/temperature variation tolerant RSSI for WIA-PA transceiver

Tao Yang, Yu Jiang, Jie Li, Jiangfei Guo, Hua Chen, Jingyu Han, Guiliang Guo and Yuepeng Yan

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 Corresponding author: Tao Yang, Emailyangtao@ime.ac.cn

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Abstract: This paper presents a high resolution, process/temperature variation tolerant received signal strength indicator (RSSI) for wireless networks for industrial automation process automation (WIA-PA) transceiver fabricated in 0.18μm CMOS technology. The active area of the RSSI is 0.24 mm2. Measurement results show that the proposed RSSI has a dynamic range more than 70 dB and the linearity error is within ± 0.5 dB for an input power from -70 to 0 dBm (dBm to 50 Ω ), the corresponding output voltage is from 0.81 to 1.657 V and the RSSI slope is 12.1 mV/dB while consuming all of 2 mA from a 1.8 V power supply. Furthermore, by the help of the integrated compensation circuit, the proposed RSSI shows the temperature error within ± 1.5 dB from -40 to 85 ℃, and process variation error within ± 0.25 dB, which exhibits good temperature-independence and excellent robustness against process variation characteristics.

Key words: limiterRSSIhigh resolutiondynamic rangedetection sensitivityrail-to-rail buffer



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Fig1.  Block diagram of a typical low-IF wireless receiver.

Fig2.  Output voltage of each branch of the RSSI when (a) $A^{i}V_{\rm I}$ < $V_{\rm s}$ and (b) $A^{i}V_{\rm I}$ $\geqslant$ $V_{\rm s}$ for $i$ $=$ 0,1,$\cdots$,$N$.

Fig3.  Linear error and power consumption versus gain stage numbers.

Fig4.  Architecture of the proposed RSSI.

Fig5.  Circuit diagram of the gain stage with feed-forward offset cancellation and CMFB functions.

Fig6.  Frequency response of the limiter with offset cancellation circuit.

Fig7.  Circuit diagram of the proposed full-wave rectifier.

Fig8.  Proposed LPF and buffer.

Fig9.  Chip microphotograph of the proposed RSSI.

Fig10.  Measured RSSI output with temperature variation and process variation. (a) Measured RSSI output data and its error at 27 $\du$. (b) Measured RSSI output data and its error at 85 $\du$. (c) Measured RSSI output data and its error at $-40$ $\du$. (c) Compare the different chips for process variation.

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Table 1.   Comparison of different RSSIs performance.

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    Received: 19 January 2015 Revised: Online: Published: 01 August 2015

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      Tao Yang, Yu Jiang, Jie Li, Jiangfei Guo, Hua Chen, Jingyu Han, Guiliang Guo, Yuepeng Yan. A CMOS high resolution, process/temperature variation tolerant RSSI for WIA-PA transceiver[J]. Journal of Semiconductors, 2015, 36(8): 085005. doi: 10.1088/1674-4926/36/8/085005 T Yang, Y Jiang, J Li, J F Guo, H Chen, J Y Han, G L Guo, Y P Yan. A CMOS high resolution, process/temperature variation tolerant RSSI for WIA-PA transceiver[J]. J. Semicond., 2015, 36(8): 085005. doi: 10.1088/1674-4926/36/8/085005.Export: BibTex EndNote
      Citation:
      Tao Yang, Yu Jiang, Jie Li, Jiangfei Guo, Hua Chen, Jingyu Han, Guiliang Guo, Yuepeng Yan. A CMOS high resolution, process/temperature variation tolerant RSSI for WIA-PA transceiver[J]. Journal of Semiconductors, 2015, 36(8): 085005. doi: 10.1088/1674-4926/36/8/085005

      T Yang, Y Jiang, J Li, J F Guo, H Chen, J Y Han, G L Guo, Y P Yan. A CMOS high resolution, process/temperature variation tolerant RSSI for WIA-PA transceiver[J]. J. Semicond., 2015, 36(8): 085005. doi: 10.1088/1674-4926/36/8/085005.
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      A CMOS high resolution, process/temperature variation tolerant RSSI for WIA-PA transceiver

      doi: 10.1088/1674-4926/36/8/085005
      Funds:

      Project supported by the National High Technology Research and Development Program of China (No. 2011AA040102).

      More Information
      • Corresponding author: Emailyangtao@ime.ac.cn
      • Received Date: 2015-01-19
      • Accepted Date: 2015-02-09
      • Published Date: 2015-01-25

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