Citation: |
Runhua Huang, Yonghong Tao, Song Bai, Gang Chen, Ling Wang, Ao Liu, Neng Wei, Yun Li, Zhifei Zhao. Design and fabrication of a 3.3 kV 4H-SiC MOSFET[J]. Journal of Semiconductors, 2015, 36(9): 094002. doi: 10.1088/1674-4926/36/9/094002
R H Huang, Y H Tao, S Bai, G Chen, L Wang, A Liu, N Wei, Y Li, Z F Zhao. Design and fabrication of a 3.3 kV 4H-SiC MOSFET[J]. J. Semicond., 2015, 36(9): 094002. doi: 10.1088/1674-4926/36/9/094002.
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Design and fabrication of a 3.3 kV 4H-SiC MOSFET
doi: 10.1088/1674-4926/36/9/094002
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Abstract
A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 1015 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current Id = 5 A at Vg = 20 V, corresponding to Vd = 2.5 V.-
Keywords:
- 4H-SiC,
- MOSFET,
- interface state
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] -
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