J. Semicond. > 2016, Volume 37 > Issue 1 > 014009, doi: 10.1088/1674-4926/37/1/014009
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SEMICONDUCTOR DEVICES

Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings

Yunchang Xiao1, Changyong Zhu2 and Rixing Wang1

+ Author Affiliations

 Corresponding author: Yunchang Xiao, phyxiaofan@163.com

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Abstract: Arbitrary magnetic field modulations to the semiconductor pump with both the Rashba and Dresselhaus spin-orbit couplings (SOC) are studied. The pump is driven by double time-dependent delta potentials, which are formed in the interfaces between the semiconductor region and two normal leads. Based on the Floquet scattering approach, our calculations show that various currents can be pumped by couplings of the magnetic fields and the SOCs. Pure spin currents modulated by the arbitrary magnetic fields are discussed in detail.

Key words: semiconductor pump, arbitrary magnetic fields, pure spin currents



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Fig. 1.  (Color online) Schematics of the semiconductor pump. The left and right regions are two normal leads, and the middle region due to the R-D SOC is modulated by the planar magnetic fields. Interfaces between the SOC region and two normal leads are subjected to the time dependent potentials.

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Fig. 2.  (Color online) (a) Charge and (b) spin currents versus the strength of the magnetic field. The Rashba SOC strength is set as kso = 3F, k = k ; and directional magnetic fields along coordinate axes are figured corresponding to different lines in the panels.

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Fig. 3.  (Color online) Pure spin currents pumped versus variations of the magnetic field strength. The solid, dashed lines correspond to the charge and spin currents, and the magnetic field strength are equal in all directions Bx = By = Bz.

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Fig. 4.  (Color online) Pumped currents versus the combined SOCs, the solid, dash and dash-dot lines correspond to different SOC components k = 25%; 50%; 75%kso. The strength of the directional magnetic fields are chosen as Bx = By = Bz with B = 0.

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Fig. 5.  (Color online) Pumped currents ((a) and (b) to the charge and spin currents) versus the combined SOC strength in different components. Special directional magnetic fields are chosen as - = /2 with the strength of B = 0.

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    Received: 01 July 2015 Revised: Online: Published: 01 January 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(1): 014009
      Yunchang Xiao, Changyong Zhu, Rixing Wang. Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings[J]. Journal of Semiconductors, 2016, 37(1): 014009. doi: 10.1088/1674-4926/37/1/014009 Y C Xiao, C Y Zhu, R X Wang. Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings[J]. J. Semicond., 2016, 37(1): 014009. doi: 10.1088/1674-4926/37/1/014009.Export: BibTex EndNote
      Citation:
      Yunchang Xiao, Changyong Zhu, Rixing Wang. Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings[J]. Journal of Semiconductors, 2016, 37(1): 014009. doi: 10.1088/1674-4926/37/1/014009

      Y C Xiao, C Y Zhu, R X Wang. Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings[J]. J. Semicond., 2016, 37(1): 014009. doi: 10.1088/1674-4926/37/1/014009.
      Export: BibTex EndNote
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      Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings

      doi: 10.1088/1674-4926/37/1/014009
      • 1.

        College of Electrical and Information Engineering, Hunan University of Arts and Science, Changde 415000, China

      • 2.

        Department of Physics, Shaoguan University, Shaoguan 512005, China

      More Information
      • Corresponding author: Yunchang Xiao, phyxiaofan@163.com
      • Received Date: 2015-07-01
      • Accepted Date: 2015-10-11
      • Published Date: 2016-01-25

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