SEMICONDUCTOR INTEGRATED CIRCUITS

A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS

Dong Li, Qiao Meng and Fei Li

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 Corresponding author: Meng Qiao,Email:mengqiao@seu.edu.cn

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Abstract: This paper presents a 10 bit successive approximation register (SAR) analog-to-digital converter (ADC) in 0.18 μ m 1P6M CMOS technology with a 1.8 V supply voltage. To improve the conversion speed, a partial split capacitor switching scheme is proposed. By reducing the time constant of the bit cycles, the proposed technique shortens the settling time of a capacitive digital-to-analog converter (DAC). In addition, a new SAR control logic is proposed to reduce loop delay to further enhance the conversion speed. At 1.8 V supply voltage and 50 MS/s the SAR ADC achieves a signal-to-noise and distortion ratio (SNDR) of 57.5 dB and spurious-free dynamic range (SFDR) of 69.3 dB. The power consumption is 2.26 mW and the core die area is 0.096 mm2.

Key words: SAR ADCswitching schemeSAR control logicDACcomparator



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Fig. 1.  Block diagram of the proposed fully differential SAR ADC.

Fig. 2.  Flow chart of the proposed switching scheme.

Fig. 3.  Output waveform of the proposed switching method.

Fig. 4.  Equivalent circuit of the longest settling procedure of the proposed switching scheme.

Fig. 5.  The settling time against total capacitance of DAC.

Fig. 6.  Schematic of the bootstrapped switch.

Fig. 7.  Schematic of the dynamic comparator with pre-amplifier.

Fig. 8.  Schematic and timing diagram of the synchronous clock generator.

Fig. 9.  Diagram of the conventional SAR logic.

Fig. 10.  Diagram of the proposed SAR logic.

Fig. 11.  Timing diagram of the principle of the proposed SAR control logic.

Fig. 12.  Schematics of (a) the pulse generator and (b) the latch.

Fig. 13.  Chip microphotograph.

Fig. 14.  Measured FFT spectrum at 50 MS/s and 2.02 MHz input.

Fig. 15.  Dynamic performance versus input frequency.

Fig. 16.  Measured DNL and INL.

Table 1.   Performance summary.

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Table 2.   Comparison with state-of-the-other-art works.

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    Received: 09 October 2015 Revised: Online: Published: 01 January 2016

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      Dong Li, Qiao Meng, Fei Li. A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS[J]. Journal of Semiconductors, 2016, 37(1): 015004. doi: 10.1088/1674-4926/37/1/015004 D Li, Q Meng, F Li. A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS[J]. J. Semicond., 2016, 37(1): 015004. doi: 10.1088/1674-4926/37/1/015004.Export: BibTex EndNote
      Citation:
      Dong Li, Qiao Meng, Fei Li. A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS[J]. Journal of Semiconductors, 2016, 37(1): 015004. doi: 10.1088/1674-4926/37/1/015004

      D Li, Q Meng, F Li. A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS[J]. J. Semicond., 2016, 37(1): 015004. doi: 10.1088/1674-4926/37/1/015004.
      Export: BibTex EndNote

      A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS

      doi: 10.1088/1674-4926/37/1/015004
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      Project supported by the National Natural Science Foundation of China (No. 61401097).

      More Information
      • Corresponding author: Meng Qiao,Email:mengqiao@seu.edu.cn
      • Received Date: 2015-10-09
      • Accepted Date: 2015-11-02
      • Published Date: 2016-01-25

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