SEMICONDUCTOR DEVICES

Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process

Xian Ji1, 2, Weihua Kang1, 2, Xiaodong Zhang2, , Zhili Zhang3, Jiahui Zhou1, Wenjun Xu1, Qi Li1, Gongli Xiao1, Zhijun Yin1, Yong Cai2, Baoshun Zhang3 and Haiou Li1,

+ Author Affiliations

 Corresponding author: Corresponding author. Email: lihaiou@guet.edu.cn, xdzhang2007@sinano.ac.cn; Corresponding author. Email: lihaiou@guet.edu.cn, xdzhang2007@sinano.ac.cn

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Abstract: An 80-nm gate length metamorphic high electron mobility transistor (mHEMT) on a GaAs substrate with high indium composite compound-channels In0.7Ga0.3As/In0.6Ga0.4As and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm2/(V· s) and a sheet density of 3.5 × 1012 cm-2 at 300 K have been achieved. The device's T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance Rc is 0.2 Ω ·mm when using the same metal system with the gate (Pt/Ti/Pt/Au), which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 246 and 301 GHz, respectively.

Key words: high indium composite channels80-nm gate lengthGaAs substratesimple technological process



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Fig. 1.  Epitaxial layers and structure of the fabricated mHEMT on GaAs substrate.

Fig. 2.  Cross section SEM graph of the 80-nm T-shaped gate mHEMT and top view SEM image of the gate recess corrosion.

Fig. 3.  DC $I$-$V$ characteristics of the 80-nm mHEMT.

Fig. 4.  Transfer characteristics of the 80-nm mHEMT.

Fig. 5.  Current gain and MSG/MAG as a function of frequency for the 80-nm mHEMT.

Fig. 6.  Comparing de-embed and no de-embed of the current gain $\vert h_{21}\vert $.

Fig. 7.  Dependencies of $f_{\rm T}$ and $f_{\rm max}$ on gate bias for 80-nm mHEMT where $V_{\rm DS}$ is fixed at 1.2 V.

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Table 1.   Comparison of GaAs mHEMTs performance.

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    Received: 31 May 2015 Revised: Online: Published: 01 February 2016

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      Xian Ji, Weihua Kang, Xiaodong Zhang, Zhili Zhang, Jiahui Zhou, Wenjun Xu, Qi Li, Gongli Xiao, Zhijun Yin, Yong Cai, Baoshun Zhang, Haiou Li. Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process[J]. Journal of Semiconductors, 2016, 37(2): 024006. doi: 10.1088/1674-4926/37/2/024006 X Ji, W H Kang, X D Zhang, Z L Zhang, J H Zhou, W J Xu, Q Li, G L Xiao, Z J Yin, Y Cai, B S Zhang, H O Li. Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process[J]. J. Semicond., 2016, 37(2): 024006. doi: 10.1088/1674-4926/37/2/024006.Export: BibTex EndNote
      Citation:
      Xian Ji, Weihua Kang, Xiaodong Zhang, Zhili Zhang, Jiahui Zhou, Wenjun Xu, Qi Li, Gongli Xiao, Zhijun Yin, Yong Cai, Baoshun Zhang, Haiou Li. Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process[J]. Journal of Semiconductors, 2016, 37(2): 024006. doi: 10.1088/1674-4926/37/2/024006

      X Ji, W H Kang, X D Zhang, Z L Zhang, J H Zhou, W J Xu, Q Li, G L Xiao, Z J Yin, Y Cai, B S Zhang, H O Li. Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process[J]. J. Semicond., 2016, 37(2): 024006. doi: 10.1088/1674-4926/37/2/024006.
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      Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process

      doi: 10.1088/1674-4926/37/2/024006
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      Project supported by the Key Laboratory of Nano-Devices and Applications, Nano-Fabrication Facility of SINANO, Chinese Academy of Sciences, the National Natural Science Foundation of China (Nos. 61274077, 61474031, 61464003), the Guangxi Natural Science Foundation (Nos. 2013GXNSFGA019003, 2013GXNSFAA019335), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Project (No. 9140C140101140C14069), and the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449, YJCXS201529)

      More Information
      • Corresponding author: Corresponding author. Email: lihaiou@guet.edu.cn, xdzhang2007@sinano.ac.cn; Corresponding author. Email: lihaiou@guet.edu.cn, xdzhang2007@sinano.ac.cn
      • Received Date: 2015-05-31
      • Accepted Date: 2015-07-08
      • Published Date: 2016-01-25

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