SEMICONDUCTOR DEVICES

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

Jia Yunpeng1, Su Hongyuan1, Jin Rui2, Hu Dongqing1 and Wu Yu1

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Abstract: The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance.

Key words: single event burnout (SEB)quasi-static avalanchelinear doping buffer layerheavy ion Au beam



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Fig. 1.  Cross-sectional representation of a vertical power MOSFET where the n+ source acts like the emitter, p-body acts like the base and the epitaxial layer acts like the collector of the inherent parasitic bipolar transistor.

Fig. 2.  The projected range of Au beam simulation.

Fig. 3.  Illustration of relationship between avalanche characteristics and SEB of device (single epitaxial layer).

Fig. 4.  Simulated secondary breakdown voltage and simulated parasitic bipolar turn-on current as a function of the buffer layer doping concentration using a fixed buffer thickness (10 μm).

Fig. 5.  (Color online) The electric field distribution of device with different doping concentrations of buffer layer when the secondary breakdown occurs with biasing voltage: VGS=0 V and VDS=160 V.

Fig. 6.  The concentration distribution of the VDMOSFET with optimized linear doping buffer layer.

Fig. 7.  (Color online) Quasi-static avalanche simulation curves of VDMOSFETs with different buffer layer structures. S1: no buffer layer; S2: optimized constant single buffer layer (h = 10 μm); S3: optimized linear doping buffer layer (h = 10 μm).

Fig. 8.  Simulation curves of IDS and time for the VDMOSFETs with different buffer structures with biasing voltages: VGS = 0 V and VDS = 200 V.

Fig. 9.  (Color online) The electric field distribution curves of VDMOSFET with the constant doping buffer layer (h = 10 μm) at different times with biasing voltage VDS = 200 V.

Fig. 10.  (Color online) The electric field distribution curves of VDMOSFET with the linear doping buffer layer (h =10 μm) at different times with biasing voltage VDS = 200 V.

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    Received: 14 June 2015 Revised: Online: Published: 01 February 2016

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      Jia Yunpeng, Su Hongyuan, Jin Rui, Hu Dongqing, Wu Yu. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET[J]. Journal of Semiconductors, 2016, 37(2): 024008. doi: 10.1088/1674-4926/37/2/024008 J Y peng, S H yuan, J Rui, H D qing, W Yu. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET[J]. J. Semicond., 2016, 37(2): 024008. doi: 10.1088/1674-4926/37/2/024008.Export: BibTex EndNote
      Citation:
      Jia Yunpeng, Su Hongyuan, Jin Rui, Hu Dongqing, Wu Yu. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET[J]. Journal of Semiconductors, 2016, 37(2): 024008. doi: 10.1088/1674-4926/37/2/024008

      J Y peng, S H yuan, J Rui, H D qing, W Yu. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET[J]. J. Semicond., 2016, 37(2): 024008. doi: 10.1088/1674-4926/37/2/024008.
      Export: BibTex EndNote

      Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

      doi: 10.1088/1674-4926/37/2/024008
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      Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

      • Received Date: 2015-06-14
      • Accepted Date: 2015-08-19
      • Published Date: 2016-01-25

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