SEMICONDUCTOR DEVICES

A high performance InAlN/GaN HEMT with low Ron and gate leakage

Chunlei Ma1, Guodong Gu1, 2, and Yuanjie Lü2,

+ Author Affiliations

 Corresponding author: Guodong Gu, Email: ggd1312@163.com; Yuanjie Lü, yuanjielv@163.com

PDF

Abstract: InAlN/GaN high-electron mobility transistors (HEMTs) with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/Al/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF characteristics of the devices were measured. The fabricated devices show a maximum drain current density of 2.18 A/mm at VGS = 2 V, a low on-resistance (Ron) of 1.49 Ω·mm and low gate leakage current. An excellent frequency response was also obtained. The current cut-off frequency (fT) is 81 GHz and the maximum oscillation frequency is 138 GHz, respectively.

Key words: InAlNhigh-electron-mobility transistor (HEMT)drain current densityon resistancegate leakage currentoxygen plasma treatment



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
Fig. 1.  A schematic cross section of InAlN/GaN HEMT with oxygen plasma treatment (the section under the gate) and SiN passivation.

Fig. 2.  Transfer and output characteristics of the InAlN/GaN HEMT ($L_{\rm g}$ $=$ 100 nm $W_{\rm g}$ $=$ 2 $\times$ 40 $\mu $m).

Fig. 3.  $I_{\rm GS}$--$V_{\rm GS}$ characteristics of the InAlN/GaN HEMT with oxygen plasma treatment and no oxygen plasma treatment.

Fig. 4.  F characteristics and the table of extracted equivalent circuit parameters of the InAlN/GaN HEMT.

Table 1.   The condition of O$_{2}$ plasma treatment.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2711 Times PDF downloads: 23 Times Cited by: 0 Times

    History

    Received: 11 May 2015 Revised: Online: Published: 01 February 2016

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Chunlei Ma, Guodong Gu, Yuanjie Lü. A high performance InAlN/GaN HEMT with low Ron and gate leakage[J]. Journal of Semiconductors, 2016, 37(2): 024009. doi: 10.1088/1674-4926/37/2/024009 C L Ma, G D Gu, Y Lü. A high performance InAlN/GaN HEMT with low Ron and gate leakage[J]. J. Semicond., 2016, 37(2): 024009. doi: 10.1088/1674-4926/37/2/024009.Export: BibTex EndNote
      Citation:
      Chunlei Ma, Guodong Gu, Yuanjie Lü. A high performance InAlN/GaN HEMT with low Ron and gate leakage[J]. Journal of Semiconductors, 2016, 37(2): 024009. doi: 10.1088/1674-4926/37/2/024009

      C L Ma, G D Gu, Y Lü. A high performance InAlN/GaN HEMT with low Ron and gate leakage[J]. J. Semicond., 2016, 37(2): 024009. doi: 10.1088/1674-4926/37/2/024009.
      Export: BibTex EndNote

      A high performance InAlN/GaN HEMT with low Ron and gate leakage

      doi: 10.1088/1674-4926/37/2/024009
      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61306113).

      More Information

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return