SEMICONDUCTOR INTEGRATED CIRCUITS

A highly linear power amplifier for WLAN

Jie Jin1, , Jia Shi2, Baoli Ai2 and Xuguang Zhang2

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 Corresponding author: Jin Jie, Email: jinjie_pku@126.com

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Abstract: A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus.

Key words: power amplifierInGaP/GaAs HBTEVM (error vector magnitude)adaptive bias circuitWLAN



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Fig. 1.  The output match network.

Fig. 2.  The architecture of the proposed PA.

Fig. 3.  The adaptive linear bias circuit

Fig. 4.  The base voltages of the proposed PA

Fig. 5.  The inter-stage match network

Fig. 6.  Simulation results of the 2nd method versus the 1st method, where the Pout_2nd/Gain_2nd/PAE_2nd are the simulation results of the 2nd method,and Pout_1st/Gain_1st/PAE_1st are the simulation results of the 1st method

Fig. 7.  The evaluation board of PA.

Fig. 8.  Chip photograph

Fig. 9.  (Color online) Measured and simulated S parameters

Fig. 10.  (Color online) Measured and simulated results. (a) PAE versus Pout. (b) EVM versus Pout. (c) Gain versus Pout

Table 1.   Comparison of two 2nd harmonic short circuits

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Table 2.   Comparison results

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    History

    Received: 02 June 2015 Revised: Online: Published: 01 February 2016

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      Jie Jin, Jia Shi, Baoli Ai, Xuguang Zhang. A highly linear power amplifier for WLAN[J]. Journal of Semiconductors, 2016, 37(2): 025006. doi: 10.1088/1674-4926/37/2/025006 J Jin, J Shi, B L Ai, X G Zhang. A highly linear power amplifier for WLAN[J]. J. Semicond., 2016, 37(2): 025006. doi: 10.1088/1674-4926/37/2/025006.Export: BibTex EndNote
      Citation:
      Jie Jin, Jia Shi, Baoli Ai, Xuguang Zhang. A highly linear power amplifier for WLAN[J]. Journal of Semiconductors, 2016, 37(2): 025006. doi: 10.1088/1674-4926/37/2/025006

      J Jin, J Shi, B L Ai, X G Zhang. A highly linear power amplifier for WLAN[J]. J. Semicond., 2016, 37(2): 025006. doi: 10.1088/1674-4926/37/2/025006.
      Export: BibTex EndNote

      A highly linear power amplifier for WLAN

      doi: 10.1088/1674-4926/37/2/025006
      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61201244) and the Natural Science Fund of SUES (No. E1-0501-14-0168).

      More Information
      • Corresponding author: Jin Jie, Email: jinjie_pku@126.com
      • Received Date: 2015-06-02
      • Accepted Date: 2015-07-05
      • Published Date: 2016-01-25

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