Fig. 1.
(Color online) Noise voltage power spectral density of JFET 2N3821 against frequency, before irradiation and after absorbed doses of 9.3, 30, 50, 70, and 100 krad(Si).
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| Citation: |
Wei Hu, Yiqi Zhuang, Junlin Bao, Qifeng Zhao. Total dose effects on the g-r noise of JFET transistors[J]. Journal of Semiconductors, 2016, 37(3): 034005. doi: 10.1088/1674-4926/37/3/034005
W Hu, Y Q Zhuang, J L Bao, Q F Zhao. Total dose effects on the g-r noise of JFET transistors[J]. J. Semicond., 2016, 37(3): 034005. doi: 10.1088/1674-4926/37/3/034005.
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Total dose effects on the g-r noise of JFET transistors
doi: 10.1088/1674-4926/37/3/034005
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Abstract
Silicon junction field effect transistors(JFETs) have been exposed to Co60 γ-rays to study radiation-induced effects on their dc characteristics and noise. The devices have been irradiated and measured at room temperature up to an accumulated 100 krad(Si) dose of γ radiation at a dose rate of 0.1 rad(Si)/s. During irradiation, the generation-recombination(g-r) noise increase has been observed while the dc characteristics of the transistors were kept unchanged. The increasing of the density of the same type point defects and their probability of trapping and detrapping carriers caused by irradiation have been used to explain the g-r noise amplitude increase, while the g-r noise characteristic frequency has only a slight change. -
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