SEMICONDUCTOR INTEGRATED CIRCUITS

Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer

Xiaoli Ren1, Cheng Pang1, 2, Zheng Qin1, 2, Ye Ping1, 2, Feng Jiang1, Kai Xue1, Haiyan Liu1 and Daquan Yu2,

+ Author Affiliations

 Corresponding author: Yu Daquan,Email:yudaquan@ime.ac.cn

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Abstract: An interposer test vehicle with TSVs (through-silicon vias) and two redistribute layers (RDLs) on the top side for 2.5D integration was fabricated and high-frequency interconnections were designed in the form of coplanar waveguide (CPW) and micro strip line (MSL) structures. The signal transmission structures were modeled and simulated in a 3D EM tool to estimate the S-parameters. The measurements were carried out using the vector network analyzer (VNA). The simulated results of the transmission lines on the surface of the interposer without TSVs showed good agreement with the simulated results, while the transmission structures with TSVs showed significant offset between simulation and test results. The parameters of the transmission structures were changed, and the results were also presented and discussed in this paper.

Key words: interposerTSV (through-silicon vias)RDLhigh-frequency simulationtestS-parameter



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Fig. 1.  Typical model of 2.5D package with TSV interposer.

Fig. 2.  Fabrication process flow. (a) Wafer preparation. (b) TSV etch. (c) TSV filling. (d) Bottom side RDL forming. (e) Top side RDL forming. (f) Topside pad forming. (g) Backside Si etch. (h) Backside pillar forming.

Fig. 3.  The cross section of the TSV interposers after process.

Fig. 4.  (Color online) GSG structure on the top RDL. (a) Layout. (b) Microscopic photo.

Fig. 5.  S-parameters of the GSG structure on the top RDL. (a) S11. (b) S21.

Fig. 6.  (Color online) GSG structure on the bottom RDL. (a) Layout.(b) Microscopic photo.

Fig. 7.  S-parameters of the GSG structure on the bottom RDL. (a) S11. (b) S21.

Fig. 8.  MSL structure on the interposer. (a) Layout. (b) Microscopic photo.

Fig. 9.  S-parameters of the MSL structure. (a) S11. (b) S21.

Fig. 10.  (Color online) The cross-section view of the model of transmission path with TSVs.

Fig. 11.  (Color online) Transmission path in GS structure. (a) Layout.(b) Microscopic photo.

Fig. 12.  S-parameters of the GS structure with TSVs. (a) S11. (b) S21.

Fig. 13.  (Color online) Transmission path with wide GS space. (a) Layout. (b) Microscopic photo.

Fig. 14.  S-parameters of the transmission path with wide GS space.(a) S11. (b) S21.

Fig. 15.  (Color online) The layout of the transmission path withlong lines.

Fig. 16.  S-parameters of the transmission path with long lines. (a) S11. (b) S21.

Table 1.   Typical sizes and parameters of the TSV interposer.

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    Received: 08 May 2015 Revised: Online: Published: 01 April 2016

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      Xiaoli Ren, Cheng Pang, Zheng Qin, Ye Ping, Feng Jiang, Kai Xue, Haiyan Liu, Daquan Yu. Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer[J]. Journal of Semiconductors, 2016, 37(4): 045003. doi: 10.1088/1674-4926/37/4/045003 X L Ren, C Pang, Z Qin, Y Ping, F Jiang, K Xue, H Y Liu, D Q Yu. Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer[J]. J. Semicond., 2016, 37(4): 045003. doi: 10.1088/1674-4926/37/4/045003.Export: BibTex EndNote
      Citation:
      Xiaoli Ren, Cheng Pang, Zheng Qin, Ye Ping, Feng Jiang, Kai Xue, Haiyan Liu, Daquan Yu. Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer[J]. Journal of Semiconductors, 2016, 37(4): 045003. doi: 10.1088/1674-4926/37/4/045003

      X L Ren, C Pang, Z Qin, Y Ping, F Jiang, K Xue, H Y Liu, D Q Yu. Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer[J]. J. Semicond., 2016, 37(4): 045003. doi: 10.1088/1674-4926/37/4/045003.
      Export: BibTex EndNote

      Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer

      doi: 10.1088/1674-4926/37/4/045003
      Funds:

      Project supported by the National S&T Major Projects (No. 2011ZX02709) and the National Natural Science Foundation of China (No. 61176098). Daquan Yu also appreciates the support from the 100 Talents Program of The Chinese Academy of Sciences.

      More Information
      • Corresponding author: Yu Daquan,Email:yudaquan@ime.ac.cn
      • Received Date: 2015-05-08
      • Accepted Date: 2015-10-14
      • Published Date: 2016-01-25

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