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Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Guangxing Wan, Shangqing Ren, Weichun Luo, Luwei Qi, Chao Zhao, Dapeng Chen, Xinyu Liu and Tianchun Ye

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 Corresponding author: Wenwu Wang, wangwenwu@ime.ac.cn

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Abstract: The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process.

Key words: high-k/metal gate stacksultra-thin EOTTZDBseries resistance effect



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Fig. 1.  $C$-$V$ characteristic and EOT extraction of MOS capacitor sample.

Fig. 2.  Statistic TZDB results for 63 devices of 10-6 cm2 area.

Fig. 3.  An abnormal area dependence of breakdown voltage is observed in experiments.

Fig. 4.  (Color online) FN plot for different area capacitors,$A$ $=$ 10-6 cm2.

Fig. 5.  (Color online) Fitting examples for different area capacitors with extracted series resistance.

Fig. 6.  Breakdown voltage with and W/O correction of series resistance.

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    Received: 26 August 2015 Revised: Online: Published: 01 May 2016

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      Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Guangxing Wan, Shangqing Ren, Weichun Luo, Luwei Qi, Chao Zhao, Dapeng Chen, Xinyu Liu, Tianchun Ye. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks[J]. Journal of Semiconductors, 2016, 37(5): 054005. doi: 10.1088/1674-4926/37/5/054005 H Xu, H Yang, Y R Wang, W W Wang, G X Wan, S Q Ren, W C Luo, L W Qi, C Zhao, D P Chen, X Y Liu, T C Ye. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks[J]. J. Semicond., 2016, 37(5): 054005. doi: 10.1088/1674-4926/37/5/054005.Export: BibTex EndNote
      Citation:
      Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Guangxing Wan, Shangqing Ren, Weichun Luo, Luwei Qi, Chao Zhao, Dapeng Chen, Xinyu Liu, Tianchun Ye. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks[J]. Journal of Semiconductors, 2016, 37(5): 054005. doi: 10.1088/1674-4926/37/5/054005

      H Xu, H Yang, Y R Wang, W W Wang, G X Wan, S Q Ren, W C Luo, L W Qi, C Zhao, D P Chen, X Y Liu, T C Ye. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks[J]. J. Semicond., 2016, 37(5): 054005. doi: 10.1088/1674-4926/37/5/054005.
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      Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

      doi: 10.1088/1674-4926/37/5/054005
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      Project supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

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      • Corresponding author: wangwenwu@ime.ac.cn
      • Received Date: 2015-08-26
      • Accepted Date: 2015-11-22
      • Published Date: 2016-01-25

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