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Endurance characteristics of phase change memory cells

Ruru Huo1, 2, , Daolin Cai1, Bomy Chen1, Yifeng Chen1, Yuchan Wang1, Yueqing Wang1, Hongyang Wei1, Qing Wang1, Yangyang Xia1, Dan Gao1 and Zhitang Song1

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 Corresponding author: Corresponding author. Email: huorr@shanghaitech.edu.cn

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Abstract: The endurance characteristics of phase change memory are studied. With operational cycles, the resistances of reset and set states gradually change to the opposite direction. What is more, the operational conditions that are needed are also discussed. The failure and the changes are concerned with the compositional change of the phase change material. An abnormal phenomenon that the threshold voltage decreases slightly at first and then increases is observed, which is due to the coaction of interface contact and growing active volume size changing.

Key words: phase change memoryendurance, compositional changethreshold voltage



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Fig. 1.  Cross-sectional images of phase change memory cells in (a) set and (b) reset states.

Fig. 2.  Schematic description of a memory cell.

Fig. 3.  An integrated current source measurement set up for memory cell characterization.

Fig. 4.  One reset-set cycle operating pulse. The resistance is read ten times per order.

Fig. 5.  Endurance test result with 200 ns 1.5 mA reset pulse and 1 $\mu $s 0.4 mA set pulse.

Fig. 6.  Programming curves obtained after 1, 10$^{3}$, and 10$^{5}$ operating, respectively.

Fig. 7.  Threshold voltage changes with operational cycles of a memory cell.

Fig. 8.  $I$-$V^{1/2}$ data and fitting curve after programming.

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Table 1.   The detailed date of fitting.

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    Received: 29 July 2015 Revised: Online: Published: 01 May 2016

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      Ruru Huo, Daolin Cai, Bomy Chen, Yifeng Chen, Yuchan Wang, Yueqing Wang, Hongyang Wei, Qing Wang, Yangyang Xia, Dan Gao, Zhitang Song. Endurance characteristics of phase change memory cells[J]. Journal of Semiconductors, 2016, 37(5): 054009. doi: 10.1088/1674-4926/37/5/054009 R R Huo, D L Cai, B Chen, Y F Chen, Y C Wang, Y Q Wang, H Y Wei, Q Wang, Y Y Xia, D Gao, Z T Song. Endurance characteristics of phase change memory cells[J]. J. Semicond., 2016, 37(5): 054009. doi: 10.1088/1674-4926/37/5/054009.Export: BibTex EndNote
      Citation:
      Ruru Huo, Daolin Cai, Bomy Chen, Yifeng Chen, Yuchan Wang, Yueqing Wang, Hongyang Wei, Qing Wang, Yangyang Xia, Dan Gao, Zhitang Song. Endurance characteristics of phase change memory cells[J]. Journal of Semiconductors, 2016, 37(5): 054009. doi: 10.1088/1674-4926/37/5/054009

      R R Huo, D L Cai, B Chen, Y F Chen, Y C Wang, Y Q Wang, H Y Wei, Q Wang, Y Y Xia, D Gao, Z T Song. Endurance characteristics of phase change memory cells[J]. J. Semicond., 2016, 37(5): 054009. doi: 10.1088/1674-4926/37/5/054009.
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      Endurance characteristics of phase change memory cells

      doi: 10.1088/1674-4926/37/5/054009
      Funds:

      Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (No. XDA09020402), the National Key Basic Research Program of China (Nos. 2013CBA01900, 2010CB934300, 2011CBA00607, 2011CB932804), the National Integrate Circuit Research Program of China (No. 2009ZX02023-003), the National Natural Science Foundation of China (No. 61176122, 61106001, 61261160500, 61376006), and the Science and Technology Council of Shanghai (Nos. 12nm0503701, 13DZ2295700, 12QA1403900, 13ZR1447200, 14ZR1447500).

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      • Corresponding author: Corresponding author. Email: huorr@shanghaitech.edu.cn
      • Received Date: 2015-07-29
      • Accepted Date: 2015-09-19
      • Published Date: 2016-01-25

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