SEMICONDUCTOR INTEGRATED CIRCUITS

15158A SP6T RF switch based on IBM SOI CMOS technology

Zhiqun Cheng1, , Guoguo Yan1, 2, Wayne Ni2, Dandan Zhu1, Hannah Ni2, Jin Li2, Shuai Chen1 and Guohua Liu1

+ Author Affiliations

 Corresponding author: Corresponding author. Email: zhiqun@hdu.edu.cn, ghliu@hdu.edu.cn

PDF

Abstract: This paper presents the design of single-pole six-throw (SP6T) RF switch with IBM 0.18 μm SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The circuit is designed and simulated by using an idea that the total load is divided into six branches and SOI special structures. The insertion loss is less than 0.6 dB, isolation is more than 30 dB, the input power P0.1dB for 0.1 dB compression point is more than 37.5 dBm, IIP3 is more than 70 dBm, the 2nd and the 3rd harmonic compressions are more than 96 dBc, and the control voltage is (+2.46 V, 0, -2.46 V) in the frequency from 0.1 to 2.7 GHz.

Key words: silicon-on-insulator (SOI)complementary metal oxide semiconductor (CMOS)single-pole six-throw (SP6T)RF switch



[1]
[2]
[3]
[4]
[5]
[6]
[7]
Fig. 1.  A simplified SP6T switch topology

Fig. 2.  Equivalent circuit at ON state

Fig. 3.  Switch transistor model of on-state

Fig. 4.  Stack FET topology in series/shunt branches

Fig. 5.  Insertion loss and Isolation

Fig. 6.  Output power versus input power

Fig. 7.  (Color online) Photograph of SP6T

Fig. 8.  (Color online) Insertion loss of the six ports

Fig. 9.  (Color online) Isolation of ANT to six ports

Fig. 10.  Output power versus input power

Table 1.   SP6T switch performance comparison

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3856 Times PDF downloads: 52 Times Cited by: 0 Times

    History

    Received: 31 July 2015 Revised: Online: Published: 01 May 2016

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhiqun Cheng, Guoguo Yan, Wayne Ni, Dandan Zhu, Hannah Ni, Jin Li, Shuai Chen, Guohua Liu. 15158A SP6T RF switch based on IBM SOI CMOS technology[J]. Journal of Semiconductors, 2016, 37(5): 055007. doi: 10.1088/1674-4926/37/5/055007 Z Q Cheng, G G Yan, W Ni, Dandan Zhu and A Zhu, H Ni, J Li, S Chen, G H Liu. 15158A SP6T RF switch based on IBM SOI CMOS technology[J]. J. Semicond., 2016, 37(5): 055007. doi: 10.1088/1674-4926/37/5/055007.Export: BibTex EndNote
      Citation:
      Zhiqun Cheng, Guoguo Yan, Wayne Ni, Dandan Zhu, Hannah Ni, Jin Li, Shuai Chen, Guohua Liu. 15158A SP6T RF switch based on IBM SOI CMOS technology[J]. Journal of Semiconductors, 2016, 37(5): 055007. doi: 10.1088/1674-4926/37/5/055007

      Z Q Cheng, G G Yan, W Ni, Dandan Zhu and A Zhu, H Ni, J Li, S Chen, G H Liu. 15158A SP6T RF switch based on IBM SOI CMOS technology[J]. J. Semicond., 2016, 37(5): 055007. doi: 10.1088/1674-4926/37/5/055007.
      Export: BibTex EndNote

      15158A SP6T RF switch based on IBM SOI CMOS technology

      doi: 10.1088/1674-4926/37/5/055007
      Funds:

      Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LZ16F010001).

      More Information
      • Corresponding author: Corresponding author. Email: zhiqun@hdu.edu.cn, ghliu@hdu.edu.cn
      • Received Date: 2015-07-31
      • Accepted Date: 2015-10-26
      • Published Date: 2016-01-25

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return