SEMICONDUCTOR DEVICES

Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti

Huoxi Xu1 and Jingping Xu2,

+ Author Affiliations

 Corresponding author: Jingping Xu, Email: 799904108@qq.com

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Abstract: LaON, LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La2O3 using the sputtering method to fabricate Ge MOS capacitors, and the electrical properties of the devices are carefully examined. LaON/Ge capacitors exhibit the best interface quality, gate leakage property and device reliability, but a smaller k value (14.9). LaTiO/Ge capacitors exhibit a higher k value (22.7), but a deteriorated interface quality, gate leakage property and device reliability. LaTiON/Ge capacitors exhibit the highest k value (24.6), and a relatively better interface quality (3.1×1011 eV-1cm-2), gate leakage property (3.6×10-3 A/cm2 at Vg=1 V+Vfb) and device reliability. Therefore, LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials.

Key words: Ge MOS capacitorLa2O3N or/and Ti incorporationinterface propertiesk value



[1]
Robertson J, Wallace R M. High-k materials and metal gates for CMOS applications. Mater Sci Eng R, 2015, 88:1
[2]
Oh I K, Kim M K, Lee J S, et al. The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition. Appl Surf Sci, 2013, 287:349
[3]
Liu Chen, Zhang Yuming, Zhang Yimen, et al. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors. Journal of Semiconductors, 2015, 36:124003
[4]
Bethge O, Henkel C, Abermann S, et al. Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric. Appl Surf Sci, 2012, 258:3444
[5]
Bom N M, Soares G V, Krug C, et al. Evolution of the Al2O3/Ge (100) interface for reactively sputter-deposited films submitted to postdeposition anneals. Appl Surf Sci, 2012, 258:5707
[6]
Zhou Jiahui, Chang Hudong, Liu Honggang, et al. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application. Journal of Semiconductors, 2015, 36:054004
[7]
Xie Q, Deduytsche D, Schaekers M, et al. Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer. Appl Phys Lett, 2010, 97:112905
[8]
Fu C H, Chang-Liao K S, Liu L J, et al. An ultralow EOT Ge MOS device with tetragonal HfO2 and high quality HfxGeyO interfacial layer. IEEE Trans Electron Devices, 2014, 61:2662
[9]
Sun Q Q, Shi Y, Dong L, et al. Impact of germanium related defects on electrical performance of hafnium oxide. Appl Phys Lett, 2008, 92:102908
[10]
Mirovic I Z, Althobaiti M, Weerakkody A, et al. Ge interface engineering using ultra-thin La2O3 and Y2O3 films:a study into the effect of deposition temperature. J Appl Phys, 2014, 115:114102
[11]
Lamagna L, Wiemer C, Perego M, et al. O3-based atomic layer deposition of hexagonal La2O3 films on Si (100) and Ge (100) substrates. J Appl Phys, 2010, 108:084108
[12]
Galata S F, Mavrou G, Tsipas P, et al. Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal. J Vac Sci Technol B, 2009, 27:246
[13]
Xu H X, Xu J P, Li C X, et al. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-k LaTiON gate dielectric. Appl Phys A, 2010, 99:903
[14]
Cheng C L, Horng J H, Wu Y Z. Electrical and reliability characteristics of HfLaTiO-gated metal-oxide-semiconductor capacitors with various Ti concentrations. Device Mater Reliab, 2012, 12:399
[15]
Li C X, Zou X, Lai P T, et al. Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric. Microelectron Reliab, 2008, 48:526
[16]
He G, Sun Z Q, Liu M, et al. Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor. Appl Phys Lett, 2010, 97:192902
[17]
Kawada N, Ito M, Saito Y. Thermal stability of lanthanum oxynitride ultrathin films deposited on silicon substrates. Jpn J Appl Phys, 2006, 45:9197
[18]
He G, Liu J W, Chen H S, et al. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation. J Mater Chem C, 2014, 2:5299
[19]
Terman L M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid State Electron, 1962, 5:285
[20]
Ji F, Xu J P, Lai P T, et al. Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer. Electron Device Lett, 2011, 32:122
Fig. 1.  TEM pictures of (a) La2O3/Ge MOS, (b) LaON/Ge MOS and (c) LaTiON/Ge MOS.

Fig. 2.  High-frequency (1-MHz) C-V curves for the LO, LON, LTO and LTON samples.

Fig. 3.  Gate-leakage current density versus gate voltage for the LO, LON, LTO and LTON samples.

Fig. 4.  Flat-band voltage shift (△Vfb) and gate leakage current density increase (△Jg) at Vg=Vfb + 1V for the LO, LON, LTO and LTON samples after a high-field stress (at 10 MV/cm for 3600 s).

Table 1.   Parameters of the Ge MOS capacitors extracted from HF (1-MHz) C-V curves, and tox is the physical thickness of gate dielectric measured by ellipsometry.

Sampletox (nm)Cox (pF)CET (nm)Vfb (V)Qox (cm-2) Dit (eV-1cm-2)k
LO7.511082.50.23-1.03×10123.3×101111.7
LON8.051292.10.19-8.5×10111.2×101114.9
LTO7.542091.30.47-6.15×10127.1×101122.7
LTON7.552271.20.34-4.3×1012 3.1×101124.6
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[1]
Robertson J, Wallace R M. High-k materials and metal gates for CMOS applications. Mater Sci Eng R, 2015, 88:1
[2]
Oh I K, Kim M K, Lee J S, et al. The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition. Appl Surf Sci, 2013, 287:349
[3]
Liu Chen, Zhang Yuming, Zhang Yimen, et al. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors. Journal of Semiconductors, 2015, 36:124003
[4]
Bethge O, Henkel C, Abermann S, et al. Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric. Appl Surf Sci, 2012, 258:3444
[5]
Bom N M, Soares G V, Krug C, et al. Evolution of the Al2O3/Ge (100) interface for reactively sputter-deposited films submitted to postdeposition anneals. Appl Surf Sci, 2012, 258:5707
[6]
Zhou Jiahui, Chang Hudong, Liu Honggang, et al. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application. Journal of Semiconductors, 2015, 36:054004
[7]
Xie Q, Deduytsche D, Schaekers M, et al. Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer. Appl Phys Lett, 2010, 97:112905
[8]
Fu C H, Chang-Liao K S, Liu L J, et al. An ultralow EOT Ge MOS device with tetragonal HfO2 and high quality HfxGeyO interfacial layer. IEEE Trans Electron Devices, 2014, 61:2662
[9]
Sun Q Q, Shi Y, Dong L, et al. Impact of germanium related defects on electrical performance of hafnium oxide. Appl Phys Lett, 2008, 92:102908
[10]
Mirovic I Z, Althobaiti M, Weerakkody A, et al. Ge interface engineering using ultra-thin La2O3 and Y2O3 films:a study into the effect of deposition temperature. J Appl Phys, 2014, 115:114102
[11]
Lamagna L, Wiemer C, Perego M, et al. O3-based atomic layer deposition of hexagonal La2O3 films on Si (100) and Ge (100) substrates. J Appl Phys, 2010, 108:084108
[12]
Galata S F, Mavrou G, Tsipas P, et al. Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal. J Vac Sci Technol B, 2009, 27:246
[13]
Xu H X, Xu J P, Li C X, et al. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-k LaTiON gate dielectric. Appl Phys A, 2010, 99:903
[14]
Cheng C L, Horng J H, Wu Y Z. Electrical and reliability characteristics of HfLaTiO-gated metal-oxide-semiconductor capacitors with various Ti concentrations. Device Mater Reliab, 2012, 12:399
[15]
Li C X, Zou X, Lai P T, et al. Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric. Microelectron Reliab, 2008, 48:526
[16]
He G, Sun Z Q, Liu M, et al. Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor. Appl Phys Lett, 2010, 97:192902
[17]
Kawada N, Ito M, Saito Y. Thermal stability of lanthanum oxynitride ultrathin films deposited on silicon substrates. Jpn J Appl Phys, 2006, 45:9197
[18]
He G, Liu J W, Chen H S, et al. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation. J Mater Chem C, 2014, 2:5299
[19]
Terman L M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid State Electron, 1962, 5:285
[20]
Ji F, Xu J P, Lai P T, et al. Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer. Electron Device Lett, 2011, 32:122
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    Received: 23 November 2015 Revised: 23 February 2016 Online: Published: 01 June 2016

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      Huoxi Xu, Jingping Xu. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti[J]. Journal of Semiconductors, 2016, 37(6): 064006. doi: 10.1088/1674-4926/37/6/064006 H X Xu, J P Xu. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti[J]. J. Semicond., 2016, 37(6): 064006. doi: 10.1088/1674-4926/37/6/064006.Export: BibTex EndNote
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      Huoxi Xu, Jingping Xu. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti[J]. Journal of Semiconductors, 2016, 37(6): 064006. doi: 10.1088/1674-4926/37/6/064006

      H X Xu, J P Xu. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti[J]. J. Semicond., 2016, 37(6): 064006. doi: 10.1088/1674-4926/37/6/064006.
      Export: BibTex EndNote

      Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti

      doi: 10.1088/1674-4926/37/6/064006
      Funds:

      the National Natural Science Foundation of China No. 61274112

      the Scientific Research Program of Huanggang Normal University No. 2012028803

      the Natural Science Foundation of Hubei Province No. 2011CDB165

      Project supported by the National Natural Science Foundation of China (No. 61274112), the Natural Science Foundation of Hubei Province (No. 2011CDB165), and the Scientific Research Program of Huanggang Normal University (No. 2012028803).

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      • Corresponding author: Email: 799904108@qq.com
      • Received Date: 2015-11-23
      • Revised Date: 2016-02-23
      • Published Date: 2016-06-01

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