Fig. 1.
(Color online) Structure of NMOSFETs used in this work.
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| Citation: |
Dezhao Yu, Qiwen Zheng, Jiangwei Cui, Hang Zhou, Xuefeng Yu, Qi Guo. Total dose responses and reliability issues of 65 nm NMOSFETs[J]. Journal of Semiconductors, 2016, 37(6): 064016. doi: 10.1088/1674-4926/37/6/064016
D Z Yu, Q W Zheng, J W Cui, H Zhou, X F Yu, Q Guo. Total dose responses and reliability issues of 65 nm NMOSFETs[J]. J. Semicond., 2016, 37(6): 064016. doi: 10.1088/1674-4926/37/6/064016.
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Total dose responses and reliability issues of 65 nm NMOSFETs
doi: 10.1088/1674-4926/37/6/064016
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Abstract
In this paper, total dose responses and reliability issues of MOSFETs fabricated by 65 nm CMOS technology were examined. "Radiation-induced narrow channel effect" is observed in a narrow channel device. Similar to total dose responses of NMOSFETs, narrow channel NMOSFEs have larger hot-carrier-induced degradation than wide channel devices. Step Time-Dependent Dielectric Breakdown (TDDB) stresses are applied, and narrow channel devices have higher breakdown voltage than wide channel devices, which agree with "weakest link" theory of TDDB. Experimental results show that linear current, transconductance, saturated drain current and subthreshold swing are superposed degenerated by total dose irradiation and reliability issues, which may result in different lifetime from that considering total dose irradiation reliability issues separately.-
Keywords:
- total dose responses,
- reliability,
- lifetime
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References
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