SEMICONDUCTOR DEVICES

Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

Yuan Teng, Yangjun Zhu, Zhengsheng Han and Tianchun Ye

+ Author Affiliations

 Corresponding author: Zhu Yangjun,Email: zhuyangjun@ime.ac.cn; Ye Tianchun,Email: tcye@ime.ac.cn

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Abstract: The insulated gate bipolar transistor (IGBT) has negative Miller capacitance during switching transients. It has conventionally been attributed to the voltage dependency of the Miller capacitance. However this explanation has physical ambiguity, yet, it lacks a discussion of the conditions for the occurrence of negative Miller capacitance as well. We argue that it is the current dependence to the Miller capacitance that results in the negative case. In this paper, we provide a modification to the theoretical analysis of this phenomenon. The occurrence condition for it and the device parameters about it are discussed. It is discovered that the negative Miller capacitance must occur during the turn-off process for any IGBT, while it is relatively difficult during the turn-on process. At the device design level, the current gain of the PNP transistor in the IGBT is an important factor for the negative Miller capacitance.

Key words: IGBTnegative Miller capacitancetheoretical analysis



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Boehmer J, Schumann J, Eckel H G. Effect of the Miller-capacitance during switching transients of IGBT and MOSFET. 15th International Power Electronics and Motion Control Conference, 2012:LS6d.3-1
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.  (Color online) Cross section of the IGBT and the Miller capacitance.

.  The current directions for (a) the positive and (b) the negative Miller capacitance.

.  Voltage dependency of the Miller capacitance.

.  (Color online) Current distribution diagram of the IGBT.

.  Miller capacitance characteristics and the quasi-static representation of the turn-on process.

.  (Color online) Experimental observation of the negative Miller capacitance.

.  The movement of the representative point of the Miller capacitance from t1 to t2.

.  (Color online) The waveforms of two IGBT samples with different back doses.

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Boehmer J, Schumann J, Eckel H G. Effect of the Miller-capacitance during switching transients of IGBT and MOSFET. 15th International Power Electronics and Motion Control Conference, 2012:LS6d.3-1
[5]
[6]
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[8]
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    Received: 13 December 2015 Revised: Online: Published: 01 July 2016

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      Yuan Teng, Yangjun Zhu, Zhengsheng Han, Tianchun Ye. Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs[J]. Journal of Semiconductors, 2016, 37(7): 074005. doi: 10.1088/1674-4926/37/7/074005 Y Teng, Y J Zhu, Z S Han, T C Ye. Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs[J]. J. Semicond., 2016, 37(7): 074005. doi: 10.1088/1674-4926/37/7/074005.Export: BibTex EndNote
      Citation:
      Yuan Teng, Yangjun Zhu, Zhengsheng Han, Tianchun Ye. Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs[J]. Journal of Semiconductors, 2016, 37(7): 074005. doi: 10.1088/1674-4926/37/7/074005

      Y Teng, Y J Zhu, Z S Han, T C Ye. Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs[J]. J. Semicond., 2016, 37(7): 074005. doi: 10.1088/1674-4926/37/7/074005.
      Export: BibTex EndNote

      Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

      doi: 10.1088/1674-4926/37/7/074005
      More Information
      • Corresponding author: Zhu Yangjun,Email: zhuyangjun@ime.ac.cn; Ye Tianchun,Email: tcye@ime.ac.cn
      • Received Date: 2015-12-13
      • Accepted Date: 2016-01-26
      • Published Date: 2016-07-25

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