SEMICONDUCTOR PHYSICS

The algorithm for the piezoresistance coefficients of p-type polysilicon

Jian Wang1, and Rongyan Chuai2

+ Author Affiliations

 Corresponding author: Wang Jian, Email: wj100_108@126.com

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Abstract: In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole conduction mass by stress, a novel algorithm for the piezoresistance coefficients of p-type polysilicon is presented. It proposes three fundamental piezoresistance coefficients π11, π12 and π44 of the grain neutral and grain boundary regions, separately. With those piezoresistance coefficients, the gauge factors of the p-type polysilicon nanofilm and the p-type common polysilicon film are calculated, and then the plots of the gauge factor as a function of doping concentration are given, which are consistent with the experimental results.

Key words: piezoresistance coefficientpolysilicon nanofilmtunneling piezoresistance modelp-type polysilicon



[1]
Erskine J C. Polycrystalline Si-on-metal strain gauge transducers. IEEE Trans Magnet, 1983, ED-30(7): 796 http://cn.bing.com/academic/profile?id=2042595728&encoded=0&v=paper_preview&mkt=zh-cn
[2]
French P J, Evens A G R. Piezoresistance in polysilicon. Electron Lett, 1984, 20(24): 999 doi: 10.1049/el:19840680
[3]
Schubert D, Jenschke W, Uhlig T, et al. Piezoresistive properties of polycrystalline and crystalline silicon films. Sensors and Actuators A, 1987, 11(2): 145 doi: 10.1016/0250-6874(87)80013-6
[4]
Gridchin V A, Lubimsky V M, Sarina M P. Piezoresistive properties of polysilicon films. Sensors and Actuators A, 1995, 49(1/2): 67 http://cn.bing.com/academic/profile?id=1975305774&encoded=0&v=paper_preview&mkt=zh-cn
[5]
French P J, Evens A G R. Polycrystalline silicon strain sensors. Sensors and Actuators A, 1985, 8(3): 135 http://cn.bing.com/academic/profile?id=2042715517&encoded=0&v=paper_preview&mkt=zh-cn
[6]
Chuai Rongyan. Study on the characteristics of polysilicon nano film. Harbin: Harbin Institute Technology, 2007
[7]
Chuai Rongyan, Liu Xiaowei, Huo Mingxue, et al. Effect of doping concentration on the strain coefficient of polysilicon nanofilms. Chinese Journal of Semiconductors, 2006, 27(7): 1230
[8]
Chuai Rongyan, Liu Bin, Liu Xiaowei. Tunneling piezoresistive effect of grain boundary in polysilicon nanofilms. Journal of Semiconductors, 2010, 31(3): 032002 doi: 10.1088/1674-4926/31/3/032002
[9]
Chuai Rongyan, Wang Jian, Wu Meile. A tunneling piezoresistive model for polysilicon. Journal of Semiconductors, 2012, 33(9): 092003 doi: 10.1088/1674-4926/33/9/092003
[10]
Smith C S. Piezoresistance effect in germanium and silicon. Phys Rev, 1954, 94(1): 42 doi: 10.1103/PhysRev.94.42
[11]
Suzuki K, Hasegawa H, Kanda Y. Origin of the linear and nonlinear piezoresistance effects in p-type silicon. Jpn J Appl Phys, 1984, 23(11): L871 http://cn.bing.com/academic/profile?id=2039978858&encoded=0&v=paper_preview&mkt=zh-cn
[12]
Kleimann P, Semmache B, Le Berre M, et al. Stress-dependent hole effective masses and piezoresistance properties of p-type monocrystalline and polycrystalline silicon. Phys Rev B, 1998, 57(15): 8966 doi: 10.1103/PhysRevB.57.8966
[13]
Pikus G E, Bir G L. Symmetry and strain-induced effects in semiconductors. John Wiley & Son Inc, 1974
[14]
Ma Jianli, Zhang Heming, Song Jianjun. Energy band structure of uniaxial-strained silicon material on the (001) surface arbitrary orientation. Acta Physica Sinica, 2011, 60(2): 307 http://cn.bing.com/academic/profile?id=1556818145&encoded=0&v=paper_preview&mkt=zh-cn
[15]
Motorola. Motorola pressure sensor distributor handbook. Motorola Corporation, 2001
[16]
Toriyama T, Sugiyama S. Analysis of piezoresistance in p-type silicon for mechanical sensors. J Microelectromech Syst, 2002, 11(5): 598 doi: 10.1109/JMEMS.2002.802904
[17]
French P J, Evans A G R. Piezoresistance in polysilicon and its application to strain gauges. Solid State Electron, 1989, 32(1): 1 doi: 10.1016/0038-1101(89)90041-5
[18]
Shun Yicai, Liu Yuling, Meng Qinghao. Design and manufacture of pressure sensor and its application. Metallurgical Industry Press, 2000
[19]
Hong Yingping, Liang Ting, Ge Binger, et al. A novel algorithmic method for piezoresistance calculation. Journal of Semiconductors, 2014, 35(5): 054009 doi: 10.1088/1674-4926/35/5/054009
[20]
Li Sainan, Liang Ting, Wang Wei, et al. A novel SOI pressure sensor for high temperature application. Journal of Semiconductors, 2015, 36(1): 014014 doi: 10.1088/1674-4926/36/1/014014
Fig. 1.  The p-type polysilicon structure in one dimension[6].

Fig. 2.  Equivalent circuit of TPM at the range of middle temperature[2].

Fig. 3.  Energy band diagram under a voltage in the grain boundary depletion region[6].

Fig. 4.  Comparison of calculated results with average experimental results of the p-type PSNF gauge factors as a function of doping concentration.

Fig. 5.  Comparison of calculated values with experimental values of the common polysilicon films gauge factors as a function of doping concentration.

[1]
Erskine J C. Polycrystalline Si-on-metal strain gauge transducers. IEEE Trans Magnet, 1983, ED-30(7): 796 http://cn.bing.com/academic/profile?id=2042595728&encoded=0&v=paper_preview&mkt=zh-cn
[2]
French P J, Evens A G R. Piezoresistance in polysilicon. Electron Lett, 1984, 20(24): 999 doi: 10.1049/el:19840680
[3]
Schubert D, Jenschke W, Uhlig T, et al. Piezoresistive properties of polycrystalline and crystalline silicon films. Sensors and Actuators A, 1987, 11(2): 145 doi: 10.1016/0250-6874(87)80013-6
[4]
Gridchin V A, Lubimsky V M, Sarina M P. Piezoresistive properties of polysilicon films. Sensors and Actuators A, 1995, 49(1/2): 67 http://cn.bing.com/academic/profile?id=1975305774&encoded=0&v=paper_preview&mkt=zh-cn
[5]
French P J, Evens A G R. Polycrystalline silicon strain sensors. Sensors and Actuators A, 1985, 8(3): 135 http://cn.bing.com/academic/profile?id=2042715517&encoded=0&v=paper_preview&mkt=zh-cn
[6]
Chuai Rongyan. Study on the characteristics of polysilicon nano film. Harbin: Harbin Institute Technology, 2007
[7]
Chuai Rongyan, Liu Xiaowei, Huo Mingxue, et al. Effect of doping concentration on the strain coefficient of polysilicon nanofilms. Chinese Journal of Semiconductors, 2006, 27(7): 1230
[8]
Chuai Rongyan, Liu Bin, Liu Xiaowei. Tunneling piezoresistive effect of grain boundary in polysilicon nanofilms. Journal of Semiconductors, 2010, 31(3): 032002 doi: 10.1088/1674-4926/31/3/032002
[9]
Chuai Rongyan, Wang Jian, Wu Meile. A tunneling piezoresistive model for polysilicon. Journal of Semiconductors, 2012, 33(9): 092003 doi: 10.1088/1674-4926/33/9/092003
[10]
Smith C S. Piezoresistance effect in germanium and silicon. Phys Rev, 1954, 94(1): 42 doi: 10.1103/PhysRev.94.42
[11]
Suzuki K, Hasegawa H, Kanda Y. Origin of the linear and nonlinear piezoresistance effects in p-type silicon. Jpn J Appl Phys, 1984, 23(11): L871 http://cn.bing.com/academic/profile?id=2039978858&encoded=0&v=paper_preview&mkt=zh-cn
[12]
Kleimann P, Semmache B, Le Berre M, et al. Stress-dependent hole effective masses and piezoresistance properties of p-type monocrystalline and polycrystalline silicon. Phys Rev B, 1998, 57(15): 8966 doi: 10.1103/PhysRevB.57.8966
[13]
Pikus G E, Bir G L. Symmetry and strain-induced effects in semiconductors. John Wiley & Son Inc, 1974
[14]
Ma Jianli, Zhang Heming, Song Jianjun. Energy band structure of uniaxial-strained silicon material on the (001) surface arbitrary orientation. Acta Physica Sinica, 2011, 60(2): 307 http://cn.bing.com/academic/profile?id=1556818145&encoded=0&v=paper_preview&mkt=zh-cn
[15]
Motorola. Motorola pressure sensor distributor handbook. Motorola Corporation, 2001
[16]
Toriyama T, Sugiyama S. Analysis of piezoresistance in p-type silicon for mechanical sensors. J Microelectromech Syst, 2002, 11(5): 598 doi: 10.1109/JMEMS.2002.802904
[17]
French P J, Evans A G R. Piezoresistance in polysilicon and its application to strain gauges. Solid State Electron, 1989, 32(1): 1 doi: 10.1016/0038-1101(89)90041-5
[18]
Shun Yicai, Liu Yuling, Meng Qinghao. Design and manufacture of pressure sensor and its application. Metallurgical Industry Press, 2000
[19]
Hong Yingping, Liang Ting, Ge Binger, et al. A novel algorithmic method for piezoresistance calculation. Journal of Semiconductors, 2014, 35(5): 054009 doi: 10.1088/1674-4926/35/5/054009
[20]
Li Sainan, Liang Ting, Wang Wei, et al. A novel SOI pressure sensor for high temperature application. Journal of Semiconductors, 2015, 36(1): 014014 doi: 10.1088/1674-4926/36/1/014014
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    Received: 02 December 2015 Revised: 13 March 2016 Online: Published: 01 August 2016

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      Jian Wang, Rongyan Chuai. The algorithm for the piezoresistance coefficients of p-type polysilicon[J]. Journal of Semiconductors, 2016, 37(8): 082001. doi: 10.1088/1674-4926/37/8/082001 J Wang, R Y Chuai. The algorithm for the piezoresistance coefficients of p-type polysilicon[J]. J. Semicond., 2016, 37(8): 082001. doi: 10.1088/1674-4926/37/8/082001.Export: BibTex EndNote
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      Jian Wang, Rongyan Chuai. The algorithm for the piezoresistance coefficients of p-type polysilicon[J]. Journal of Semiconductors, 2016, 37(8): 082001. doi: 10.1088/1674-4926/37/8/082001

      J Wang, R Y Chuai. The algorithm for the piezoresistance coefficients of p-type polysilicon[J]. J. Semicond., 2016, 37(8): 082001. doi: 10.1088/1674-4926/37/8/082001.
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      The algorithm for the piezoresistance coefficients of p-type polysilicon

      doi: 10.1088/1674-4926/37/8/082001
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      Project supported by the National Natural Science Foundation of China (No. 61372019)

      Project supported by the National Natural Science Foundation of China 61372019

      More Information
      • Corresponding author: Wang Jian, Email: wj100_108@126.com
      • Received Date: 2015-12-02
      • Revised Date: 2016-03-13
      • Published Date: 2016-08-01

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