Fig. 1.
(a) SemiSJ-CSTBT. (b) CSTBT.
DownLoad:
| Citation: |
Yan Jia, Hong Chen, Ji Tan, Shuojin Lu, Yangjun Zhu. A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate[J]. Journal of Semiconductors, 2016, 37(8): 084003. doi: 10.1088/1674-4926/37/8/084003
Y Jia, H Chen, J Tan, S J Lu, Y J Zhu. A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate[J]. J. Semicond., 2016, 37(8): 084003. doi: 10.1088/1674-4926/37/8/084003.
Export: BibTex EndNote
|
A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate
doi: 10.1088/1674-4926/37/8/084003
More Information-
Abstract
A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching loss. Although the turn-off switching loss decreases as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar, which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Therefore, the proposed SemiSJ-CSTBT offers considerably better robustness compared to the conventional CSTBT and SJ-CSTBT. The simulation results show that the SemiSJ-CSTBT exhibits an increase in breakdown voltage by 160 V (13%) and a reduction of turn-off switching loss by approximately 15%.-
Keywords:
- CSTBT,
- high breakdown voltage,
- p-pillar,
- SemiSJ-CSTBT,
- turn-off switching loss
-
References
[1] Constapel R, Korec J, Baliga B J. Trench-IGBTs with integrated diverter structures. Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs, 1995: 201 http://cn.bing.com/academic/profile?id=2140751637&encoded=0&v=paper_preview&mkt=zh-cn[2] Takahashi H, Haruguchi H, Hagino H, et al. Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application. Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs, 1996: 349 http://cn.bing.com/academic/profile?id=1936126188&encoded=0&v=paper_preview&mkt=zh-cn[3] Zhang Jinping, Li Zehong, Zhang Bo, et al. A novel high performance TFS SJ IGBT with a buried oxide layer. Chinese Physics B, 2014, 23(08): 625 http://cn.bing.com/academic/profile?id=2402075825&encoded=0&v=paper_preview&mkt=zh-cn[4] Tsuchiya T, Park K C, Toyonaga S, et al. CSTBT (Ⅲ) as the next generation IGBT. 20th International Symposium on Power Semiconductor Devices and IC's, 2008: 72 http://cn.bing.com/academic/profile?id=2157464861&encoded=0&v=paper_preview&mkt=zh-cn[5] Antoniou M, Udrea F, Bauer F, et al. Point injection in trench insulated gate bipolar transistor for ultra low losses. 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2012: 21 http://cn.bing.com/academic/profile?id=2131204746&encoded=0&v=paper_preview&mkt=zh-cn[6] Li Z, Jiang F X, Li B, et al. A new way to break through the limitation of CS-layer doping on the breakdown voltage of CSTBT: the superjunction solution. TENCON 2013-2013 IEEE Region 10 Conference (31194), 2013: 1 http://cn.bing.com/academic/profile?id=2058802035&encoded=0&v=paper_preview&mkt=zh-cn[7] Li Zehong, Ren Min, Zhang Bo, et al. Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth. Journal of Semiconductors, 2010, 31(8): 084002 doi: 10.1088/1674-4926/31/8/084002 -
Proportional views
