SEMICONDUCTOR DEVICES

Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

Xin Wang1, 2, , Cuiluan Wang1, Xia Wu1, Lingni Zhu1, Hongqi Jing1, Xiaoyu Ma1 and Suping Liu1

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 Corresponding author: Xin Wang, Email:wangxinhehe123@semi.ac.cn

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Abstract: Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μm and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2-str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use.

Key words: semiconductor laserfiber couplinghigh powerhigh brightnessmodule



[1]
Dong Z, Zhao Y H, Zhang Q, et al. High power 980 nm broad area distributed feedback laser with first-order gratings. J Semicond, 2016, 37(2):024010 doi: 10.1088/1674-4926/37/2/024010
[2]
Li X, Zhao D G, Jiang D S, et al. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer. J Semicond, 2016, 37(1):014007 doi: 10.1088/1674-4926/37/1/014007
[3]
Zhu Z, Zhang X, Li P X, et al. Voltage reduction of 808 nm GaAsP/(Al) GaInP laser diodes with GaInAsP intermediate layer. J Semicond, 2015, 36(1):014011 doi: 10.1088/1674-4926/36/1/014011
[4]
Feng P, Zhang Y J, Wang Y F, et al. A novel hybrid Ⅲ-V/silicon deformed micro-disk single-mode laser. J Semicond, 2015, 36(2):024012 doi: 10.1088/1674-4926/36/2/024012
[5]
Liao Y P, Zhang Y, Xing J L, et al. High power laser diodes of 2μm AlGaAsSb/InGaSb type I quantum-wells. J Semicond, 2015, 36(5):054007 doi: 10.1088/1674-4926/36/5/054007
[6]
Ke Q, Tan S Y, Liu S T, et al. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser. J Semicond, 2015, 36(9):094010 doi: 10.1088/1674-4926/36/9/094010
[7]
Gong X Q, Feng S W, Yue Y, et al. Thermal analysis in high power GaAs-based laser diodes. J Semicond, 2016, 37(4):044011 doi: 10.1088/1674-4926/37/4/044011
[8]
Zhu Z, Zhang X, Li P X, et al. Voltage reduction of 808 nm GaAsP/(Al) GaInP laser diodes with GaInAsP intermediate layer. J Semicond, 2015, 36(10):1014011
[9]
Dong Z, Wang C L, Jing H Q, et al. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current. J Semicond, 2013, 34(11):114011 doi: 10.1088/1674-4926/34/11/114011
[10]
Liu Y Q, Cao Y H, Li J. 5 kW fiber coupling diode laser forlaser processing. Opt Precision Eng, 2015, 23(5):1279 doi: 10.3788/OPE.
[11]
Liu R C, Liu Y Y, Chen X, et al. Beam multiplexing of diode laser array. J Semicond, 2015, 36(4):004008
[12]
Bo B X, Gao X, Wang L, et al. 808 nm wavelength high power fibre coupling LD. Chin J Lasers, 1999, 269(3):193
[13]
Faircloth B. High-brightness high-power fiber coupled diode laser system for material processing and laser pumping. Proc SPIE, 2003, 4973:34 doi: 10.1117/12.478365
[14]
Chen H N, Zou Y G, Xu L, et al. Fiber coupling technology of high power semiconductor laser. Journal of Changchun University of Science and Technology (Natural Science Edition), 2014, 37(1):6
[15]
Zhou Z P. Fiber coupling design of hundred-watt high brightness semiconductor lasers. Changchun University Science and Techonlogy, 2014
[16]
Gao X, Bo B X, Zhang J, et al. High brightness operation of fiber coupling multiplex diode lasers. Chin J Lasers, 2007, 34(11):1472 https://www.researchgate.net/publication/287883325_High_brightness_operation_of_fiber_coupling_multiplex_diode_lasers
[17]
Zhu H B, Hao M M, Peng H Y, et al. Module of fiber coupled diode laser based on 808 nm single emitters combination. Chin J Lasers, 2012, 39(5):0502001 doi: 10.3788/CJL
[18]
Zhu H B, Hao M M, et al. 808 nm high brightness module of fiber coupled diode laser. Opt Precision Eng, 2012, 8:20 https://www.researchgate.net/publication/270171400_808_nm_high_brightness_module_of_fiber_coupled_diode_laser
Fig. 1.  Epitaxial structure of semiconductor laser.

Fig. 2.  Output power and voltage of semiconductor laser.

Fig. 3.  915 nm semiconductor laser output light spot.

Fig. 4.  915 nm semiconductor laser divergence angle.

Fig. 5.  Optical structure of 915 nm semiconductor laser single coupling.

Fig. 6.  Light spot of fiber.

Fig. 7.  The light spot after reshaping.

Fig. 8.  The whole structure of semiconductor laser.

Fig. 9.  The fiber coupling module after setting.

Fig. 10.  Output power and voltage of semiconductor laser fiber coupling module.

Table 1.   915 nm single semiconductor laser diode beam's parameter before and after collimation.

[1]
Dong Z, Zhao Y H, Zhang Q, et al. High power 980 nm broad area distributed feedback laser with first-order gratings. J Semicond, 2016, 37(2):024010 doi: 10.1088/1674-4926/37/2/024010
[2]
Li X, Zhao D G, Jiang D S, et al. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer. J Semicond, 2016, 37(1):014007 doi: 10.1088/1674-4926/37/1/014007
[3]
Zhu Z, Zhang X, Li P X, et al. Voltage reduction of 808 nm GaAsP/(Al) GaInP laser diodes with GaInAsP intermediate layer. J Semicond, 2015, 36(1):014011 doi: 10.1088/1674-4926/36/1/014011
[4]
Feng P, Zhang Y J, Wang Y F, et al. A novel hybrid Ⅲ-V/silicon deformed micro-disk single-mode laser. J Semicond, 2015, 36(2):024012 doi: 10.1088/1674-4926/36/2/024012
[5]
Liao Y P, Zhang Y, Xing J L, et al. High power laser diodes of 2μm AlGaAsSb/InGaSb type I quantum-wells. J Semicond, 2015, 36(5):054007 doi: 10.1088/1674-4926/36/5/054007
[6]
Ke Q, Tan S Y, Liu S T, et al. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser. J Semicond, 2015, 36(9):094010 doi: 10.1088/1674-4926/36/9/094010
[7]
Gong X Q, Feng S W, Yue Y, et al. Thermal analysis in high power GaAs-based laser diodes. J Semicond, 2016, 37(4):044011 doi: 10.1088/1674-4926/37/4/044011
[8]
Zhu Z, Zhang X, Li P X, et al. Voltage reduction of 808 nm GaAsP/(Al) GaInP laser diodes with GaInAsP intermediate layer. J Semicond, 2015, 36(10):1014011
[9]
Dong Z, Wang C L, Jing H Q, et al. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current. J Semicond, 2013, 34(11):114011 doi: 10.1088/1674-4926/34/11/114011
[10]
Liu Y Q, Cao Y H, Li J. 5 kW fiber coupling diode laser forlaser processing. Opt Precision Eng, 2015, 23(5):1279 doi: 10.3788/OPE.
[11]
Liu R C, Liu Y Y, Chen X, et al. Beam multiplexing of diode laser array. J Semicond, 2015, 36(4):004008
[12]
Bo B X, Gao X, Wang L, et al. 808 nm wavelength high power fibre coupling LD. Chin J Lasers, 1999, 269(3):193
[13]
Faircloth B. High-brightness high-power fiber coupled diode laser system for material processing and laser pumping. Proc SPIE, 2003, 4973:34 doi: 10.1117/12.478365
[14]
Chen H N, Zou Y G, Xu L, et al. Fiber coupling technology of high power semiconductor laser. Journal of Changchun University of Science and Technology (Natural Science Edition), 2014, 37(1):6
[15]
Zhou Z P. Fiber coupling design of hundred-watt high brightness semiconductor lasers. Changchun University Science and Techonlogy, 2014
[16]
Gao X, Bo B X, Zhang J, et al. High brightness operation of fiber coupling multiplex diode lasers. Chin J Lasers, 2007, 34(11):1472 https://www.researchgate.net/publication/287883325_High_brightness_operation_of_fiber_coupling_multiplex_diode_lasers
[17]
Zhu H B, Hao M M, Peng H Y, et al. Module of fiber coupled diode laser based on 808 nm single emitters combination. Chin J Lasers, 2012, 39(5):0502001 doi: 10.3788/CJL
[18]
Zhu H B, Hao M M, et al. 808 nm high brightness module of fiber coupled diode laser. Opt Precision Eng, 2012, 8:20 https://www.researchgate.net/publication/270171400_808_nm_high_brightness_module_of_fiber_coupled_diode_laser
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    Received: 23 May 2016 Revised: 08 September 2016 Online: Published: 01 February 2017

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      Xin Wang, Cuiluan Wang, Xia Wu, Lingni Zhu, Hongqi Jing, Xiaoyu Ma, Suping Liu. Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module[J]. Journal of Semiconductors, 2017, 38(2): 024006. doi: 10.1088/1674-4926/38/2/024006 X Wang, C L Wang, X Wu, L N Zhu, H Q Jing, X Y Ma, S P Liu. Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module[J]. J. Semicond., 2017, 38(2): 024006. doi: 10.1088/1674-4926/38/2/024006.Export: BibTex EndNote
      Citation:
      Xin Wang, Cuiluan Wang, Xia Wu, Lingni Zhu, Hongqi Jing, Xiaoyu Ma, Suping Liu. Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module[J]. Journal of Semiconductors, 2017, 38(2): 024006. doi: 10.1088/1674-4926/38/2/024006

      X Wang, C L Wang, X Wu, L N Zhu, H Q Jing, X Y Ma, S P Liu. Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module[J]. J. Semicond., 2017, 38(2): 024006. doi: 10.1088/1674-4926/38/2/024006.
      Export: BibTex EndNote

      Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

      doi: 10.1088/1674-4926/38/2/024006
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      • Corresponding author: Xin Wang, Email:wangxinhehe123@semi.ac.cn
      • Received Date: 2016-05-23
      • Revised Date: 2016-09-08
      • Published Date: 2017-02-01

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