Fig. 1.
(Color online) In-plane and out-of-plane magnetic hysteresis loops of sample S1.
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Yongle Lou, Yuming Zhang, Hui Guo, Daqing Xu, Yimen Zhang. Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system[J]. Journal of Semiconductors, 2017, 38(6): 062003. doi: 10.1088/1674-4926/38/6/062003
Y L Lou, Y M Zhang, H Guo, D Q Xu, Y M Zhang. Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system[J]. J. Semicond., 2017, 38(6): 062003. doi: 10.1088/1674-4926/38/6/062003.
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Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system
doi: 10.1088/1674-4926/38/6/062003
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Abstract
The mechanism of perpendicular magnetic anisotropy (PMA) in a MgO-based magnetic tunnel junction (MTJ) has been studied in this article. By comparing the magnetic properties and elementary composition analysis for different CoFeB-based structures, such as Ta/CoFeB/MgO, Ta/CoFeB/Ta and Ru/CoFeB/MgO structures, it is found that a certain amount of Fe-oxide existing at the interface of CoFeB/MgO is helpful to enhance the PMA and the PMA is originated from the interface of CoFeB/MgO. In addition, Ta film plays an important role to enhance the PMA in Ta/CoFeB/MgO structure. -
References
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