J. Semicond. > 2019, Volume 40 > Issue 7 > 071905, doi: 10.1088/1674-4926/40/7/071905
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REVIEWS

Broadband photonic structures for quantum light sources

Zhe He1, Jiawei Yang2, Lidan Zhou2, Yan Chen3, Tianming Zhao1, , Ying Yu2, and Jin Liu1

+ Author Affiliations

 Corresponding author: Tianming Zhao, zhaotm@mail.sysu.edu.cn; Ying Yu, Email: yuying26@mail.sysu.edu.cn

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Abstract: Quantum light sources serve as one of the key elements in quantum photonic technologies. Such sources made from semiconductor material, e.g., quantum dots (QDs), are particularly appealing because of their great potential of scalability enabled by the modern planar nanofabrication technologies. So far, non-classic light sources based on semiconductor QDs are currently outperforming their counterparts using nonlinear optical process, for instance, parametric down conversion and four-wave mixing. To fully exploring the potential of semiconductor QDs, it is highly desirable to integrate QDs with a variety of photonic nanostructures for better device performance due to the improved light-matter interaction. Among different designs, the photonic nanostructures exhibiting broad operation spectral range is particularly interesting to overcome the QD spectral inhomogeneity and exciton fine structure splitting for the generations of single-photon and entangled photon pair respectively. In this review, we focus on recent progress on high-performance semiconductor quantum light sources that is achieved by integrating single QDs with a variety of broadband photonic nanostructures i.e. waveguide, lens and low-Q cavity.

Key words: photonic nanowire, photonic crystal waveguide, solid immersion lens, micro-lens, circular Bragg grating



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Fig. 1.  (Color online) (a–b) Scanning electron microscopy (SEM) image (a) of a top–down tapered GaAs nanowire waveguide with an embedded InAs QD, together with the intensity profile for a 2D-cut along the nanowire growth axis by FDTD simulation (b). (c–d) SEM image (c) of a top–down GaAs photonic trumpet with an embedded InAs QD, together with the intensity profile for a 2D-cut along the nanowire growth axis by FDTD simulation (d). (e) SEM image of a bottom–up tapered InP nanowire waveguide containing a single InAsP QD[51], reprinted with permission, Copyright 2012, Springer Nature.

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Fig. 2.  (Color online) (a) Illustration of a finite PCW with a single QD embedded. (b) The band structure and waveguide modes of PCWs. (c) SEM picture of a PCW. (d) Decay dynamics for QDs that couple and uncouple to the PCWs[68], reprinted with permission, Copyright 2014, American Physical Society.

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Fig. 3.  (Color online) (a) The dielectric antenna consists of, from bottom to top, a silver layer, an AlGaAs membrane (with embedded QDs), a low refractive index PMMA spacer and the GaP SIL. Most photon emission is funneled into the GaP SIL[70], reprinted with permission, Copyright 2018, Springer Nature. (b) Comparison of the photon-extraction efficiency for different micro-lens mirror structures. With DBR bottom mirror, the photon extraction efficiency reaches to a plateau value of only around 23%, while with a gold bottom mirror, it is improved to more than 80% for large numerical aperture collection objectives[71], reprinted with permission, Copyright 2015, Springer Nature. (c) Schematic view of the QD micro-lens/micro-objective device. A micro-objective is printed directed on top of a QD micro-lens[73], reprinted with permission, Copyright 2017, American Chemical Society.

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Fig. 4.  (Color online) (a–c) SEM images of CBG structure[7], (a–c) are reprinted with permission, Copyright 2011, AIP Publishing. (d) The schematic of the CBR-HBR. (e) Simulated Purcell facor and collection efficiency of the CBR-HBR[3], (d) and (e) are reprinted with permission, Copyright 2019, Nature Springer.

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[10]
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[11]
Zhou T, Tang M, Xiang G, et al. Ultra-low threshold InAs/GaAs quantum dot microdisk lasers on planar on-axis Si (001) substrates. Optica, 2019, 6(4), 430 doi: 10.1364/OPTICA.6.000430
[12]
Michler P, Kiraz A, Becher C, et al. A quantum dot single-photon turnstile device. Science, 2000, 290(5500), 2282 doi: 10.1126/science.290.5500.2282
[13]
Liu S, Wei Y, Su R, et al. A deterministic quantum dot micropillar single photon source with > 65% extraction efficiency based on fluorescence imaging method. Sci Rep, 2017, 7(1), 13986 doi: 10.1038/s41598-017-13433-w
[14]
Böckler C, Reitzenstein S, Kistner C, et al. Electrically driven high-Q quantum dot-micropillar cavities. Appl Phys Lett, 2008, 92(9), 091107 doi: 10.1063/1.2890166
[15]
Heindel T, Schneider C, Lermer M, et al. Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency. Appl Phys Lett, 2010, 96(1), 011107 doi: 10.1063/1.3284514
[16]
Schneider C, Gold P, Reitzenstein S, et al. Quantum dot micropillar cavities with quality factors exceeding 250,000. Appl Phys B, 2016, 122(1), 19 doi: 10.1007/s00340-015-6283-x
[17]
Somaschi N, Giesz V, De Santis L, et al. Near-optimal single-photon sources in the solid state. Nat Photonics, 2016, 10, 340 doi: 10.1038/nphoton.2016.23
[18]
Wang H, Duan Z C, Li Y H, et al. Near-transform-limited single photons from an efficient solid-state quantum emitter. Phys Rev Lett, 2016, 116(21), 213601 doi: 10.1103/PhysRevLett.116.213601
[19]
Ellis B, Mayer M A, Shambat G, et al. Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser. Nat Photonics, 2011, 5, 297 doi: 10.1038/nphoton.2011.51
[20]
Gong Y, Ellis B, Shambat G, et al. Nanobeam photonic crystal cavity quantum dot laser. Opt Express, 2010, 18(9), 8781 doi: 10.1364/OE.18.008781
[21]
Vučković J, Yamamoto Y. Photonic crystal microcavities for cavity quantum electrodynamics with a single quantum dot. Appl Phys Lett, 2003, 82(15), 2374 doi: 10.1063/1.1567824
[22]
Hennessy K J, P Reese C, Badolato A, et al. High-Q photonic crystal cavities with embedded quantum dots. Proc SPIE, 2004, 5359, 210 doi: 10.1117/12.517229
[23]
Song Y, Liu M, Zhang Y, et al. High-Q photonic crystal slab nanocavity with an asymmetric nanohole in the center for QED. J Opt Soc Am B, 2011, 28(2), 265 doi: 10.1364/JOSAB.28.000265
[24]
Englund D, Fattal D, Waks E, et al. Controlling the spontaneous emission rate of single quantum dots in a two-dimensional photonic crystal. Phys Rev Lett, 2005, 95(1), 013904 doi: 10.1103/PhysRevLett.95.013904
[25]
Hennessy K, Badolato A, Winger M, et al. Quantum nature of a strongly coupled single quantum dot-cavity system. Nature, 2007, 445, 896 doi: 10.1038/nature05586
[26]
Ellis D J P, Stevenson R M, Young R J, et al. Control of fine-structure splitting of individual InAs quantum dots by rapid thermal annealing. Appl Phys Lett, 2007, 90(1), 011907 doi: 10.1063/1.2430489
[27]
Heller W, Bockelmann U, Abstreiter G. Electric-field effects on excitons in quantum dots. Phys Rev B, 1998, 57(11), 6270 doi: 10.1103/PhysRevB.57.6270
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Bennett A J, Pooley M A, Stevenson R M, et al. Electric-field-induced coherent coupling of the exciton states in a single quantum dot. Nat Physics, 2010, 6, 947 doi: 10.1038/nphys1780
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Schäffler F. High-mobility Si and Ge structures. Semicond Sci Technol, 1997, 12(12), 1515 doi: 10.1088/0268-1242/12/12/001
[30]
Hung C Y, Schlesinger T E, Reed M L. Piezoelectrically induced stress tuning of electro-optic devices. Appl Phys Lett, 1991, 59(27), 3598 doi: 10.1063/1.105644
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Ding F, Singh R, Plumhof J D, et al. Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress. Phys Rev Lett, 2010, 104(6), 067405 doi: 10.1103/PhysRevLett.104.067405
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Kim J H, Richardson C J K, Leavitt R P, et al. Quantum dots in photonic crystals for integrated quantum photonics. SPIE Nanoscience + Engineering, 2017, 10345
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    Received: 10 May 2019 Revised: 10 June 2019 Online: Accepted Manuscript: 13 June 2019Uncorrected proof: 14 June 2019Published: 05 July 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(7): 071905
      Zhe He, Jiawei Yang, Lidan Zhou, Yan Chen, Tianming Zhao, Ying Yu, Jin Liu. Broadband photonic structures for quantum light sources[J]. Journal of Semiconductors, 2019, 40(7): 071905. doi: 10.1088/1674-4926/40/7/071905 Z He, J W Yang, L D Zhou, Y Chen, T M Zhao, Y Yu, J Liu, Broadband photonic structures for quantum light sources[J]. J. Semicond., 2019, 40(7): 071905. doi: 10.1088/1674-4926/40/7/071905.Export: BibTex EndNote
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      Zhe He, Jiawei Yang, Lidan Zhou, Yan Chen, Tianming Zhao, Ying Yu, Jin Liu. Broadband photonic structures for quantum light sources[J]. Journal of Semiconductors, 2019, 40(7): 071905. doi: 10.1088/1674-4926/40/7/071905

      Z He, J W Yang, L D Zhou, Y Chen, T M Zhao, Y Yu, J Liu, Broadband photonic structures for quantum light sources[J]. J. Semicond., 2019, 40(7): 071905. doi: 10.1088/1674-4926/40/7/071905.
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      Broadband photonic structures for quantum light sources

      doi: 10.1088/1674-4926/40/7/071905
      • 1.

        State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

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        State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

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        Institute for Integrative Nanosciences, Leibniz IFW Dresden, Helmholtzstrasse 20, Dresden 01069, Germany

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