Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201 J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.Export: BibTex EndNote
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Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201
J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.
Export: BibTex EndNote
|
Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201 J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.Export: BibTex EndNote
Citation:
|
Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201
J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.
Export: BibTex EndNote
|