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High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films

Jianhua Zhao

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    Received: Revised: Online: Published: 04 August 2020

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      Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201 J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.Export: BibTex EndNote
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      Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201

      J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.
      Export: BibTex EndNote

      High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films

      doi: 10.1088/1674-4926/41/8/080201
      • Published Date: 2020-08-01

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