J. Semicond. > 2023, Volume 44 > Issue 12 > 121901, doi: 10.1088/1674-4926/44/12/121901
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REVIEWS

Quantum cascade lasers grown by MOCVD

Yongqiang Sun1, 2, 3, Guangzhou Cui1, 2, 3, Kai Guo1, 2, Jinchuan Zhang1, 2, , Ning Zhuo1, 2, Lijun Wang1, 2, 3, Shuman Liu1, 2, 3, Zhiwei Jia1, 2, Teng Fei1, 2, 3, Kun Li1, 2, 3, Junqi Liu1, 2, 3, Fengqi Liu1, 2, 3 and Shenqiang Zhai1, 2,

+ Author Affiliations

 Corresponding author: Jinchuan Zhang, zhangjinchuan@semi.ac.cn; Shenqiang Zhai, zsqlzsmbj@semi.ac.cn

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Abstract: Sharing the advantages of high optical power, high efficiency and design flexibility in a compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser sources for gas sensing, infrared spectroscopic, medical diagnosis, and defense applications. Metalorganic chemical vapor deposition (MOCVD) is an important technology for growing high quality semiconductor materials, and has achieved great success in the semiconductor industry due to its advantages of high efficiency, short maintenance cycles, and high stability and repeatability. The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices. This review summarizes the recent progress of QCLs grown by MOCVD. Material quality and the structure design together determine the device performance. Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

Key words: quantum cascade lasers, continuous wave, high optical power, metal organic chemical vapor deposition, broad gain



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Fig. 1.  (Color online) Typical mid infrared QCL structure[11].

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Fig. 2.  (Color online) (a) A schematic diagram of the energy band under an electric field intensity of 51 kV/cm. (b) CW P−I−V curves of laser with 8 μm ridge width and 4.0 mm cavity length at different heat sink temperatures[31].

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Fig. 3.  (Color online) AFM images (10 × 10 μm2) of 30-period of In0.53Ga0.47As/In0.52Al0.48As (8/15 nm) multi-quantum wells (MQWs) grown at (a) 680 °C, (b) 720 °C, and (c) 760 °C. The height scale is 5 nm for all images[33].

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Fig. 4.  (Color online) (a) Interruption time versus PL intensity of emission and FWHM of PL peak, (b) mobility and bulk carrier concentration behavior of InxAl1–xAs epilayers with increasing AsH3 flow from 5 to 40 sccm[34, 35].

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Fig. 5.  (Color online) Calculated conduction band diagram of (a) the abrupt interface (8.2 μm) in the active region of the QCL, (b) the gradient interface (9.1 μm) in the active region of the QCL[23].

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Fig. 6.  (Color online) Cation concentration profiles of Al, Ga, and In in AlInAs/GaInAs MQWs. The growth direction is from left to right. The blue, red, and green curves, respectively, represent the composition contents of Al, Ga, and In in the MQWs[37].

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Fig. 7.  (Color online) Curves of pulsed and continuous wave operation of a 9.3 μm uncoated buried heterostructure QCL (12 μm × 5 mm long) measured at 15 °C[23].

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Fig. 8.  (Color online) Energy band diagrams at the laser threshold, the bias with the highest pulsed electrical insertion efficiency, flip bias, and detector bias (zero bias)[39].

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Fig. 9.  (Color online) Calculated energy diagram of a QCL based on a Ga0.47In0.53As/Al0.48In0.52As heteropair. The intensity of the applied electric field is 62 kV/cm[40].

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Fig. 10.  (Color online) P−I−V of a 10 μm × 4 mm long, HR-coated laser under CW conditions at different temperatures. (b) Variation curves of WPE with current injection at different temperatures[42].

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Fig. 11.  (Color online) (a) The right-hand colored solid line represents the power curve, and the right-hand colored dashed line represents the WPE curve. (b) The mid-threshold current density and the slope efficiency near the threshold under the operation of pulse operation (480 ns, 20 kHz) vary with the temperature of the heat sink changing characteristics[19].

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Fig. 12.  (Color online) (a) The material In0.52Al0.48As/In0.53Ga0.47As that matches the lattice parameter of InP has ΔEC = 520 meV; (b) strain compensated In1-xGaxAs/In1-yAlyAs material on InP with ΔEC > 520 meV, where x > 0.53 and y < 0.52.

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Fig. 13.  (Color online) A schematic diagram of the energy band under an electric field intensity of 41 kV/cm[43].

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Fig. 14.  (Color online) P−I−V of a 8 μm × 3 mm long, HR-coated laser under CW conditions at different temperatures. The inset depicts the spectra of the DAU operating both below and above threshold at a temperature of 300 K. (b) The mid-threshold current density and the slope efficiency near the threshold under the operation of CW operation vary with the temperature of the heat sink changing characteristics[43].

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Fig. 15.  (Color online) CW (solid line) LIV curves of a laser chip with 11.5 μm wide stripes and 6 mm cavity length from 15 to 95 °C. The dashed red line is the WPE curve at 15 °C[20].

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Fig. 16.  (Color online) (a) Schematic band diagram and wavefunctions, at threshold, for conventional 8–9 μm QCL[45]. (b) Conduction-band diagram and relevant wavefunctions, at threshold, for the STA QCL[46].

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Fig. 17.  (Color online) P−I−V and WPE of a 8.0 μm-emitting STA QCL under CW conditions measured at room temperature[24].

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Fig. 18.  (Color online) P−I−V and WPE of a 9.5 μm × 5 mm long, HR-coated laser under CW conditions at 300 K[18].

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Fig. 19.  (Color online) P−I−V of a 5.5 μm × 6 mm long, HR-coated laser under CW conditions at different temperature. WPE (dash line) of a 5.5 μm × 6 mm long, HR-coated laser under CW conditions at 293 K[22].

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Fig. 20.  (Color online) Calculated CB profile and key wave functions for (a) Conventional QC laser emitting at 4.8 μm[51]. (b) Deep-well QC laser under an electric field of 75 kV/cm (λ ≈ 4.8 μm). The upper lasing level is labeled as 4, while 5, 6, and 7 are upper energy levels in the active region. The band profile at the top of each figure corresponds to the X valley[52].

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Fig. 21.  (Color online) (a) A schematic diagram of the energy band under an electric field intensity of 72 kV/cm. (b) P−I−V and WPE of a 10.6 μm × 4 mm long, HR-coated laser under CW conditions at 300 K[24].

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Fig. 22.  (Color online) (a) Schematic diagram of the reference energy band at an electric field strength of 75 kV/cm. (b) Schematic diagram of the modified energy bands at an electric field strength of 75 kV/cm[55].

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Fig. 23.  (Color online) P−I−V and WPE of a 10.6 μm × 4 mm long, HR-coated laser under CW and pulsed conditions at 300 K[55].

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Fig. 24.  (Color online) P−I−V and WPE curves of a 5 μm × 4 mm long emitting 4.0 μm laser with a 90% HR coating in CW mode at 288 K[21].

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Fig. 25.  (Color online) (a) A schematic diagram of the energy band under an electric field intensity of 41 kV/cm. (b) EL spectrum curves between sub-bands of the mesa device at different voltages. The inset shows FWHM of the EL spectrum for the double upper level (solid squares), BTC (solid circles)[64], and bound to bound (solid triangles) as a function of voltage[61].

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Fig. 26.  (Color online) (a) Schematic diagram of the energy bands of the continuum-to-continuum designed active region structure under an electric field of 69 kV/cm. (b) EL spectra under different electric fields at a temperature of 295 K[65].

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Fig. 27.  (Color online) (a) EL spectra at different voltages at 300K. (b) P−I of a 12 μm × 3 mm long, HR-coated laser under CW conditions at different temperature. The voltage−current curves at 280 and 370 K are intentionally shown. P− I−V of a 12 μm × 3 mm long, HR-coated laser under pulsed conditions and 1% duty cycle at 300 K[62].

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Fig. 28.  (Color online) (a) A schematic diagram of the energy band under an electric field intensity of 48 kV/cm. (b) EL spectra of a 4 mm long, 10.5 μm wide, HR-coated, disrupted QCL burying the backside of the heterostructure. The inset shows the subthreshold amplified spontaneous emission spectrum of the device in pulsed mode at 300 K (80 kHz, 3 μs)[19].

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Fig. 29.  (Color online) (a) Normalized mesa EL spectra of broad-gain wafers with each individual active region and multiple active regions. (b) 6.5 μm × 6 mm gain chip under pulsed external cavity tuning laser spectrum[71].

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Table 1.   Details of nominally lattice-matched AlInAs/GaInAs superlattice structures and n = 0 peaks obtained through high-resolution X-ray diffraction measurement. SLs were grown without growth interruption, except for samples with *, where the interruption time was 4 s after barrier and well layer growth[36].

Sample Barrier thickness (nm) Well thickness (nm) SL period Number of periods n = 0 peak position (rel arcs)
1123 10 10 20 20 −10
1124* 10 10 20 20 −18
1125 10 2.5 12.5 32 −107
1126 2.5 10 12.5 32 −104
1127 5 5 10 40 −134
1128 2.5 2.5 5 80 −335
1129* 2.5 2.5 5 80 −315
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Table 2.   The most notable research results across various wavelength ranges realized by MOCVD.

Classification Authors Wavelength (μm) RT CW Power (W) RT CW WPE (%)
Short-
wavelength
QCL
(3−5 μm)		 Xie et al.[21] 4.0 0.6 5.5
Lyakh et al.[18] 4.6 1.6 8.8
Xie et al.[22] 4.6 2.5 11.7
Fei et al.[55] 4.6 3.0 10.4
Botez et al.[24] 4.9 2.6 12.5
Long-
wavelength
QCL
(8−12 μm)		 Troccoli et al.[59] 7.5 0.8 3.4
Wang et al.[39] 8.0 1 6
Fei et al.[42] 8.5 1 7.1
Troccoli et al.[59] 8.9 0.92 4
Sun et al.[19] 9.0 1 5
Wang et al.[23] 9.3 1.32 6.8
Xie et al.[20] 10.7 1.3 4.4
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    Received: 02 July 2023 Revised: 29 July 2023 Online: Accepted Manuscript: 15 October 2023Uncorrected proof: 27 November 2023Published: 10 December 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(12): 121901
      Yongqiang Sun, Guangzhou Cui, Kai Guo, Jinchuan Zhang, Ning Zhuo, Lijun Wang, Shuman Liu, Zhiwei Jia, Teng Fei, Kun Li, Junqi Liu, Fengqi Liu, Shenqiang Zhai. Quantum cascade lasers grown by MOCVD[J]. Journal of Semiconductors, 2023, 44(12): 121901. doi: 10.1088/1674-4926/44/12/121901 Y Q Sun, G Z Cui, K Guo, J C Zhang, N Zhuo, L J Wang, S M Liu, Z W Jia, T Fei, K Li, J Q Liu, F Q Liu, S Q Zhai. Quantum cascade lasers grown by MOCVD[J]. J. Semicond, 2023, 44(12): 121901. doi: 10.1088/1674-4926/44/12/121901Export: BibTex EndNote
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      Yongqiang Sun, Guangzhou Cui, Kai Guo, Jinchuan Zhang, Ning Zhuo, Lijun Wang, Shuman Liu, Zhiwei Jia, Teng Fei, Kun Li, Junqi Liu, Fengqi Liu, Shenqiang Zhai. Quantum cascade lasers grown by MOCVD[J]. Journal of Semiconductors, 2023, 44(12): 121901. doi: 10.1088/1674-4926/44/12/121901

      Y Q Sun, G Z Cui, K Guo, J C Zhang, N Zhuo, L J Wang, S M Liu, Z W Jia, T Fei, K Li, J Q Liu, F Q Liu, S Q Zhai. Quantum cascade lasers grown by MOCVD[J]. J. Semicond, 2023, 44(12): 121901. doi: 10.1088/1674-4926/44/12/121901
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      Quantum cascade lasers grown by MOCVD

      doi: 10.1088/1674-4926/44/12/121901
      • 1.

        Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing100083, China

      • 2.

        Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing100083, China

      • 3.

        Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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      • Author Bio:

        Yongqiang Sun Yongqiang Sun received his Ph.D. from the Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences. He is mainly interested in mid-infrared quantum cascade laser material epitaxial growth, and device and application research

        Jinchuan Zhang Zhang Jinchuan is a researcher and doctoral supervisor at the Institute of Semiconductors, Chinese Academy of Sciences. He is a distinguished member of the Youth Promotion Association of the Chinese Academy of Sciences, and is currently the leader of the research group of low-dimensional structural materials and devices. He is mainly engaged in research on quantum cascade laser physics, technology, and testing. He has presided over more than 10 scientific research projects, including key research and development projects, projects of the National Natural Science Foundation of China, projects of the Youth Promotion Association of the Chinese Academy of Sciences, and projects of the Beijing Natural Science Foundation of China

        Shenqiang Zhai Zhai Shenqiang is a researcher at the Institute of Semiconductors, Chinese Academy of Sciences, and a member of the Youth Promotion Association of the Chinese Academy of Sciences. In 2022, he received funding from Excellent Young Scientists Fund of the National Natural Science Foundation of China. He has been engaged in material epitaxial growth, device physics, and application research of mid-to-far infrared semiconductor quantum cascade lasers for a long time. The bottleneck of the poor interface quality of MOCVD-grown QCL materials is broken by design innovation of the energy band structure of the active region and optimization of the growth scheme. Promoting QCL technology towards industrial application is of great significance

      • Corresponding author: zhangjinchuan@semi.ac.cn; zsqlzsmbj@semi.ac.cn
      • Received Date: 2023-07-02
      • Revised Date: 2023-07-29
        • Available Online: 2023-10-15

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