A landscape of β-Ga2O3 Schottky power diodes

Man Hoi Wong

doi:10.1088/1674-4926/44/9/091605

J. Semicond. > 2023, Volume 44 > Issue 9 > 091605, doi: 10.1088/1674-4926/44/9/091605

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A landscape of β-Ga₂O₃ Schottky power diodes

Man Hoi Wong

+ Author Affiliations

Corresponding author: Man Hoi Wong, eemhwong@ust.hk

Abstract: β-Ga₂O₃ Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga₂O₃ rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β-Ga₂O₃ Schottky diodes, together with the enabling thermal packaging solutions, are also presented.

Key words: β-Ga₂O₃, Schottky diodes; power device; edge termination; nickel oxide

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Fig. 1. (Color online) (a) Schematic of the first field-plated β-Ga₂O₃ SBD. (b) Forward current–voltage (I–V) characteristic of the device. (c) Reverse breakdown characteristic of the device. Reprinted from Ref. [21], with the permission of AIP Publishing.

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Fig. 2. (Color online) (a) Schematic of a β-Ga₂O₃ SBD with an ultrahigh-permittivity field-plate dielectric, where S1 corresponds to a 15-period BaTiO₃/SrTiO₃ superlattice as the field-plate oxide [(BTO/STO)₁₅ FP] and S2 corresponds to BaTiO₃ as the field-plate oxide (BTO FP). The cross-sectional transmission electron microscopy image depicts the field-plated region of the S1 structure. (b) Forward I–V characteristics and differential R_ON,sp of a β-Ga₂O₃ SBD with (BTO/STO)₁₅ FP, a β-Ga₂O₃ SBD with BTO FP, and a reference SBD without a field plate. (c) Reverse breakdown characteristics of the three different SBD structures. © 2021 IEEE. Reprinted, with permission, from Ref. [40].

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Fig. 3. (Color online) (a) Schematics of beveled-mesa β-Ga₂O₃ SBDs with a ~45° beveled field plate (BFP) and with a small-angle (~1°) beveled field plate (SABFP). (b) Reverse breakdown characteristics of the BFP-SBD and SABFP-SBD showing higher V_br than those of mesa-free β-Ga₂O₃ SBDs that are either unterminated or terminated with a ~45° beveled surface field plate (SFP). (c) Forward I–V characteristics and differential R_ON,sp of SABFP-SBDs with different anode diameters. © 2019 IEEE. Reprinted, with permission, from Ref. [44].

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Fig. 4. (Color online) Comparison between reverse breakdown characteristics of β-Ga₂O₃ SBDs with no edge termination, He-implanted edge termination, and Mg-implanted edge termination. © 2020 IEEE. Reprinted, with permission, from Ref. [45].

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Fig. 5. (Color online) Schematics of an unterminated β-Ga₂O₃ SBD, a β-Ga₂O₃ SBD with self-aligned fluorine plasma treatment (FPT), and a β-Ga₂O₃ SBD with self-aligned beveled fluorine plasma treatment (BFPT). (b) Forward I–V characteristics and differential R_ON,sp of the three different SBDs. (c) Reverse breakdown characteristics of the three different SBDs. © 2020 IEEE. Reprinted, with permission, from Ref. [57].

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Fig. 6. (Color online) Schematic of a β-Ga₂O₃ SBD terminated with p-NiO FLRs alongside an unterminated device. Reprinted from Ref. [63], with the permission of AIP Publishing.

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Fig. 7. Calculated maximum surface electric fields (E_surf) in β-Ga₂O₃ SBDs, defined at a maximum reverse leakage current (J_R,max) of 1 or 100 mA/cm² at 25 °C. Experimental data from the literature are also shown (solid for J_R,max = 1 mA/cm² and hollow for J_R,max = 100 mA/cm²). Adapted from Ref. [67], with the permission of AIP Publishing.

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Fig. 8. (Color online) (a) Schematic of the first β-Ga₂O₃ JBSD. (b) Forward I–V characteristic of the JBSD showing similar V_ON to a regular β-Ga₂O₃ SBD and lower V_ON than a p-NiO/n-Ga₂O₃ diode (PND). (c) Reverse breakdown characteristic of the JBSD showing higher V_br than a regular β-Ga₂O₃ SBD because of the RESURF effect but lower V_br than a PND owing to higher reverse leakage current through a Schottky junction. Reprinted with permission from Ref. [72]. Copyright 2019 SPIE.

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Fig. 9. (Color online) (a) Schematic of a field-plated β-Ga₂O₃ trench SBD. (b) Cross-sectional scanning electron microscopy image of a fin channel. (c) Reverse breakdown characteristics of field-plated β-Ga₂O₃ trench SBDs. In comparison with regular β-Ga₂O₃ SBDs employing both mesa and field plate terminations, the field-plated trench devices have much lower leakage current and a much higher V_br. (d) Forward I–V characteristics and differential R_ON,sp of field-plated β-Ga₂O₃ trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements. © 2020 IEEE. Reprinted, with permission, from Ref. [82].

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Fig. 10. (Color online) Simulated electric-field profiles in a β-Ga₂O₃ trench SBD along a vertical cutline at the center of a fin under a reverse bias of –1375 V by varying (a) fin width [W_fin, see Fig. 9(a)] and (b) trench depth [d_tr, see Fig. 9(a)]. © 2020 IEEE. Reprinted, with permission, from Ref. [83].

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Fig. 11. (Color online) (a) Schematic of a field-plated β-Ga₂O₃ SBD with double-side-cooling flip-chip package. (b) I–V waveforms of the double-side-cooled device in surge current tests. (c) I–V loops of the double-side-cooled device. © 2021 IEEE. Reprinted, with permission, from Ref. [90].

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Received: 30 August 2023 Revised: 16 September 2023 Online: Accepted Manuscript: 19 September 2023Corrected proof: 20 September 2023Uncorrected proof: 20 September 2023Published: 10 September 2023

Article Navigation > Journal of Semiconductors > 2023 > 44(9): 091605

Man Hoi Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. Journal of Semiconductors, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605 M H Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. J. Semicond, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605Export: BibTex EndNote

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Man Hoi Wong. A landscape of β-Ga₂O₃ Schottky power diodes[J]. Journal of Semiconductors, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605

M H Wong. A landscape of β-Ga₂O₃ Schottky power diodes[J]. J. Semicond, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605

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Man Hoi Wong. A landscape of β-Ga₂O₃ Schottky power diodes[J]. Journal of Semiconductors, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605

M H Wong. A landscape of β-Ga₂O₃ Schottky power diodes[J]. J. Semicond, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605

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A landscape of β-Ga₂O₃ Schottky power diodes

doi: 10.1088/1674-4926/44/9/091605

Man Hoi Wong

Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

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Author Bio:
Man Hoi Wong is an Associate Professor at the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology (HKUST). He received his Ph.D. from the University of California Santa Barbara, USA, in 2009. Prof. Wong has worked at the SEMATECH corporate research consortium in the USA and the National Institute of Information and Communications Technology in Japan as a research scientist. Prior to joining HKUST, he was an Assistant Professor at the University of Massachusetts Lowell, USA. His current research focuses on ultrawide-bandgap semiconductor materials and power devices
Corresponding author: eemhwong@ust.hk
Received Date: 2023-08-30
Revised Date: 2023-09-16

Available Online: 2023-09-19

Abstract

Abstract

β-Ga₂O₃ Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga₂O₃ rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β-Ga₂O₃ Schottky diodes, together with the enabling thermal packaging solutions, are also presented.
- β-Ga₂O₃,
- Schottky diodes; power device; edge termination; nickel oxide

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References

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A landscape of β-Ga₂O₃ Schottky power diodes

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A landscape of β-Ga₂O₃ Schottky power diodes

A landscape of β-Ga₂O₃ Schottky power diodes