Chin. J. Semicond. > 2006, Volume 27 > Issue 6 > 1026-1029

PAPERS

Growth and Properties of Cd0.8Mn0.2Te Crystal

Zhang Jijun and Jie Wanqi

+ Author Affiliations

PDF

Abstract: By optimizing growth parameters,a vertical Bridgman method is successfully used to grow a Cd0.8Mn0.2Te crystal with a size of Φ30mm×120mm.The as-grown crystal is characterized by X-ray powder diffractometer,X-ray double-crystal diffractometer,ultraviolet visible-near infrared spectrum,and IR transmittance and resistivity measurements.The results show that the as-grown crystal has a cubic structure with lattice constant a≈0.6454nm,and its absorption edge is 720nm,corresponding to the band gap of 1.722eV.The results also show high crystallinity,high IR transmittance,and high resistivity.The effect of crystal defects on the IR transmittance and resistivity is discussed.

Key words: Cd0.8Mn0.2TeX-ray diffractioninfrared transmittanceresistivityultraviolet visible-near infrared spectrum

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2739 Times PDF downloads: 1715 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 June 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhang Jijun, Jie Wanqi. Growth and Properties of Cd0.8Mn0.2Te Crystal[J]. Journal of Semiconductors, 2006, In Press. Zhang J J, Jie W Q. Growth and Properties of Cd0.8Mn0.2Te Crystal[J]. Chin. J. Semicond., 2006, 27(6): 1026.Export: BibTex EndNote
      Citation:
      Zhang Jijun, Jie Wanqi. Growth and Properties of Cd0.8Mn0.2Te Crystal[J]. Journal of Semiconductors, 2006, In Press.

      Zhang J J, Jie W Q. Growth and Properties of Cd0.8Mn0.2Te Crystal[J]. Chin. J. Semicond., 2006, 27(6): 1026.
      Export: BibTex EndNote

      Growth and Properties of Cd0.8Mn0.2Te Crystal

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return