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PDSOI DTMOS for analog and RF application

Wang Yiqi, Liu Mengxin, Bi Jinshun and Han Zhengsheng

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Abstract: Based on the platform of 0.35 μm PDSOI CMOS process technology, the partially depleted silicon-on-insulator dynamic threshold voltage (PDSOI DT) NMOS with an H-gate was implemented. The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and conventional H-gate NMOS were performed and compared. Furthermore, the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail. The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as Vgs = 0.7 V and Vds = 1 V.

Key words: silicon-on-insulatordynamic threshold voltageanalog and RF characteristics

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    Received: 18 August 2015 Revised: 09 December 2010 Online: Published: 01 May 2011

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      Wang Yiqi, Liu Mengxin, Bi Jinshun, Han Zhengsheng. PDSOI DTMOS for analog and RF application[J]. Journal of Semiconductors, 2011, 32(5): 054004. doi: 10.1088/1674-4926/32/5/054004 Wang Y Q, Liu M X, Bi J S, Han Z S. PDSOI DTMOS for analog and RF application[J]. J. Semicond., 2011, 32(5): 054004. doi: 10.1088/1674-4926/32/5/054004.Export: BibTex EndNote
      Citation:
      Wang Yiqi, Liu Mengxin, Bi Jinshun, Han Zhengsheng. PDSOI DTMOS for analog and RF application[J]. Journal of Semiconductors, 2011, 32(5): 054004. doi: 10.1088/1674-4926/32/5/054004

      Wang Y Q, Liu M X, Bi J S, Han Z S. PDSOI DTMOS for analog and RF application[J]. J. Semicond., 2011, 32(5): 054004. doi: 10.1088/1674-4926/32/5/054004.
      Export: BibTex EndNote

      PDSOI DTMOS for analog and RF application

      doi: 10.1088/1674-4926/32/5/054004
      • Received Date: 2015-08-18
      • Accepted Date: 2010-11-03
      • Revised Date: 2010-12-09
      • Published Date: 2011-04-21

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