| Citation: |
Duan Baoxing, Yang Yintang, Zhang Bo, Li Zhaoji. An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure[J]. Journal of Semiconductors, 2008, In Press.
Duan B X, Yang Y T, Zhang B, Li Z J. An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure[J]. J. Semicond., 2008, 29(4): 677.
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An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure
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Abstract
A novel Step Oxide-Bypassed (SOB) trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C.This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.The main feature of this structure is the various thicknesses of sidewall oxide,which modulate electric field distribution in the drift region and the charge compensation effect.As a result,the breakdown voltage is increased no less than 20% due to the more uniform electric field of the drift region,while the specific on-resistance was reduced by 40%~60% for the step oxide bypassed compared with the oxide-bypassed structure.-
Keywords:
- step oxide-bypassed,
- VDMOS,
- breakdown voltage,
- specific on-resistance
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References
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Proportional views
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